MTE100N05
Abstract: MTE200N05 MTE120N18 MTH7N50 MTE120N20 MTE100N06 MTE200N06 MTE65N15 MTH5N95 MTH6N100
Contextual Info: - 280 - S s MTE65N15 MTE75N08 MTE75N10 MTE100N05 MTE100N06 MTE120N18 MTE120N20 MTE130N12 MTE13ÜN15 MTE150N08 MTE150N10 MTE200N05 MTE200N06 MTG9N50E MTG15P10 MTG20N20 MTH5N100 MTH5N95 MTH6N100 MTH6N100E MTH6N55 MTH6N6Û MTH6N85 MTH6N9Û MTH7N45 MTH7N50 MTH8N35
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mte65n15case353-01mte75n08mte75n10+12mth6n90t0-218acmth7h45mth7n50mte100n05mte200n05mte120n18mte120n20mte100n06mte200n06mth5n95mth6n100
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MTH5N100
Abstract: 5n95 5N100 AN569 MTH5N95 MTM5N100 MTM5N95 0610L mps 2108
Contextual Info: Order this data sheet by MTH5N95/D MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA M TH5N95 M TH 5N 100 M TM 5N 95 M TM 5N 100 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S TMOS POWER FETs 5 AMPERES rDS on = 3 OHMS
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mth5n95/dmth5n95mth5n100mtm5n95+6mtm5n1005n955n100an5690610lmps 2108
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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MTH13N50
Abstract: MTH40N10 MTH7N50 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth5n100 mth7n50 Transistor
Contextual Info: POWER TRAN SISTO RS — TM O S PLASTIC continued Plastic TM OS Power MO SFETs — TO-218AC G D S rDS(on) @ <D V BR(DSS) (Volts) Min (Ohms) Max (Amp) 1000 3 2.5 Device 950 900 550 500 450 400 350 MTH5N100 'D(Cont) (Amp) M ax PD @ Te = 25°C (W ans) M ax 5
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o-218acmth5n100mth5n95mth6n90+14mth6n85mth6n60mth8n60mth6n55mth8n55mth7n50mth13n50mth40n10mth15n20mth25n10mth35n15mth35n05mth25n08mth7n50 transistor
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MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:
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mje8502ao-220ab/to-220mjf16010ao-254+12mjf16018mjf16206mth13n50mtm565mrf531mm3220mm1758mm3904mm3004mth5n100mtm26n40emth7n50
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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