MT3S04AS Search Results

MT3S04AS

Contextual Info: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 4 AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)

MT3S04AS

Contextual Info: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz 1.6 ±0.2 ,0.8 ± 0 . 1,

MT3S04AS

Contextual Info: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

MT3S04AS

Contextual Info: MT3S04AS 暫定資料 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04AS ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.2dB, |S21e |2 単位: mm = 12.5dB f = 1 GHz

Contextual Info: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

Contextual Info: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

Contextual Info: M T6L04AE TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-

Contextual Info: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

2SC5256

Abstract: MT3S04AS MT3S04AT MT6L50AT
Contextual Info: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

MT3S03AS

Abstract: MT3S03AT MT3S04AS MT3S04AT MT6L52AE
Contextual Info: TOSHIBA MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 V in in in OO o 2 o o - F MOUNTED DEVICES

MT3S04AS

Abstract: MT3S04AT MT6L04AT
Contextual Info: TO SH IBA MT6L04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES

MT3S04AS

Abstract: MT3S04AT MT6L04AE
Contextual Info: TO SH IBA MT6L04AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)

MT3S04AS

Abstract: MT3S04AT MT6C04AE
Contextual Info: MT6C04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C04AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L04AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold

Contextual Info: MT6C04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C04AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L61AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO

Contextual Info: MT6L52AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L52AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Three-pins (SSM/TESM) mold

MT6P04AT

Contextual Info: MT6P04AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6P04AT VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are

Contextual Info: MT6L57AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AT VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

MT3S04AS

Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
Contextual Info: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold