MSB01 Search Results

l220c

Abstract: dolam
Contextual Info: Reed sensor MSB01 This product is in accordance with RoHs PRZEDSIÊBIORSTWO PRODUKCYJNE PODZESPO£ÓW ELEKTRONICZNYCH DOLAM S.A. 50-425 Wroc³aw, ul. Krakowska 64, Poland tel. +48 71/342-65-54, fax (+48) 71/342-58-59 e-mail: sales@dolam.pl www.dolam.pl 9

Contextual Info: SMB Series MSB01 RG174/U RG188/U RG316/U SMB MALE CRIMP MSB01S RG316/U SMB MALE CRIMP RG316/U SMB FEMALE CRIMP RG316/U SMB FEMALE CRIMP 32 RG174/U RG188/U RG316/U MSB05 RG174/U RG188/U RG316/U MSB06 RG174/U RG188/U RG316/U SMB FEMALE BULKHEAD CLAMP RG174/U RG188/U

771-BLF245B

Abstract: transistor j127
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION

BFG67

Contextual Info: BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

6267 ic pin details

Contextual Info: BFG92A/X NPN 5 GHz wideband transistor Rev. 06 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

CNW136

Abstract: Optocoupler 601 pulse transformer 4502 BS415 BS6301 BS7002 CNW135 CNW4502 MC8365
Contextual Info: P H ILIP S INTERNATIONAL HIE D • 7110ß2b 003Q4ba T MPHIN T - V Philips Semiconductors _ Product specification Wide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

smd diode Cathode is indicated by a blue band

Abstract: philips 683 series MGG708 1368 smd data sheet 842 626 smd smd diode Coloured band marked devices KTY85-1 KTY85-110 KTY85-120 KTY85-121
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D238 KTY85-1 series Silicon temperature sensors Product specification Supersedes data of 1996 Dec 06 File under Discrete Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Silicon temperature sensors

transistor DATA REFERENCE handbook

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a

BST84

Abstract: hotel BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST84 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

N70 transistor

Contextual Info: Philips Semiconductors 0031107 bbSSTBl 2 GHz RF power transistor DESCRIPTION T M 5 — APY^eliminaryspecification BFG10; BFG10/X N AUER PHILIPS/DISCRETE bRE » PINNING NPN silicon planar epitaxial transistor primarily designed for common emitter class-AB operation

Contextual Info: bb53T31 ODEMb^b bTb H A P X Philips Semiconductors N AUER PHILIPS/DISCRETE b7E D Product specification NPN 7 GHz wideband transistor FEATURES • BF752 PINNING PIN High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION

Contextual Info: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

Contextual Info: MN6290 MN6291 '' '! LO W -D IS TO R TIO N S A M P L IN G , 16-Bit A/D C O N V E R TE R S B n MICRO NETWORKS DESCRIPTION • 20 k H z S am p lin g R ate W ith In tern al T/H A m p lifier • 10kHz Full-P ow er In put B an d w id th • 84 d B S ig n al-to -N o ise Ratio

MN5290

Abstract: 8001K LODA MN6290 MN6290J MN6291 MN6291J MN6291S 6291s
Contextual Info: MN6290 MN6291 LOW-DISTORTION SAMPLING, 16-Bit A/D CONVERTERS MICRO NETWORKS L DESCRIPTION FEATURES The MN6290 Series of Low-Distortion, 16-Bit, Sampling, A/D Converters offers an outstanding combination of resolving power, conversion speed, low noise, and low harmonic

IC 2561 D 431

Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Contextual Info: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures

Contextual Info: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BF1202WR

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

transistor K 2937

Abstract: 367-12 BFG10 lc 7220
Contextual Info: Philips Semiconductors Preliminary specification UHF power transistor FEATURES • BFG1OW/X PINNING To be supplied. PIN DESCRIPTION 1 collector APPLICATIONS 2 emitter • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. 3 base

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer

BUW12AF

Abstract: BUW12F
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors

NPN N43

Abstract: NPN N37 BFG540 transistor N43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor

BF 212 transistor

Abstract: BFG67W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors September 1994 Philips Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR

transistor marking NEP ghz

Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES

CNR50

Abstract: TDA8385 B5415 BS415 BS7002 .2ty transistor
Contextual Info: Product specification Philips Semiconductors CNR50 Dedicated IC-optocoupler ÛUA L IT Y T E C H N O L O G I E S CORP S?£ J OD O m m b 0 1 3 * i 3TY FEATURES • A cost effective optocoupler with integrated additional functions T • A wide body DIL 8 encapsulation