MSA10 Search Results

transistor marking N1

Abstract: N11 TRANSISTOR MARKING CODE marking N11 MSA1022 n1 a marking
Contextual Info: LESHAN RADIO COMPANY, LTD. PNP RF Amplifier Transistor Surface Mount MSA1022–CT1 COLLECTOR 3 3 2 1 CASE 2 BASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

MSA100

Contextual Info: THYRISTOR MODULE SILICON DIFFUSED TYPE MSA100 G,L,Q,U 41 POWER CONTROL APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage : VdrM 1 = 4 0 0 - 1600V Repetitive Peak Reverse Voltage : Vrr m . Average On-State or Forward Current:It (AV)= If (AV)=50A

Contextual Info: MSA10 Diodes Silicon Carbide Varistor V DC Nom.(V) Varistor Voltage10 V(RMS) Max. Applied Voltage10 V(DC) Max. Applied Voltage11 V(C) Nom. (V) Clamping Voltage @I(PP) (A) (Test Condition) W(TM) Max.(J) Transient Energy0.38 Semiconductor MaterialSC Package StyleAxial

transistor marking N1

Abstract: D marking PNP MSA1022 marking code n11 marking N11 n1 a marking
Contextual Info: PNP RF Amplifier Transistor Surface Mount MSA1022–CT1 COLLECTOR 3 3 1 2 CASE 2 BASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous

MSA1022

Abstract: MSA1022-CT1 SMD310 motorola surface mount marking code MOTOROLA DATE CODE transistor marking code motorola ic
Contextual Info: MOTOROLA Order this document by MSA1022–CT1/D SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

GP Batteries

Abstract: A123
Contextual Info: Material Safety Data Sheet for GP silver oxide cells Document Number: MSA100 IDENTITY As Used on Label and List Sliver Oxide Page 1 of 4 Revision:03 Note : Blank spaces are not permitted if any item is not applicable or no information is available, the space must be

servo accelerometer

Abstract: missile accelerometer missile sensor MSA10 MSA100A MSA110A Endevco 2
Contextual Info: Micromachined Servo Accelerometer ENDEVCO Model MSA100A MODEL MSA100A • 3 mg Bias Composite Error • Rugged, Low Vibration Rectification • High Resolution • Range Adjustable • Self Test • Low Profile Actual size DESCRIPTION The ENDEVCO Model MSA100A Servo

Contextual Info: MSA1022CT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MSA1022-BT1* MSA1022-CT1* CASE 318D-03, STYLE 1 C O LLEC TO R M A XIM U M RATINGS TA = 25 C Rating 3 Symbol Value Unit Collector-Base Voltage v CBO -3 0 V Collector-Em itter Voltage v CEO -2 0 V Emitter-Base Voltage v EBO -5 V 'c -3 0 mA Symbol Max Unit

Contextual Info: MSA1022-BT1* MSA1022-CT1* CASE 318D-03, STYLE 1 M A X IM U M R A T IN G S TA = 2 5 ‘ C ì R ating S ym bol Value Unit C o lie cto r-B a se Voltage VCBO -3 0 V C o lle cto r-E m itte r V oltage v CEO -2 0 V E m itter-B ase V oltage v EBO -5 V 'c -3 0 mA

MSA100L43

Abstract: CM119
Contextual Info: THYRISTOR MODULE SILICON DIFFUSED TYPE MSA100 G,L,Q,U 43 POWER CONTROL APPLICATIONS. FEATURES : . Repetitive Peak Off-State Voltage: V d r m =400-1600V R epetitive Peak Reverse Voltage : Vr r m . Average On-State or Forward Current: T'f(AV), IF (AV) = 50A

marking code motorola ic

Abstract: motorola surface mount marking code MOTOROLA DATE CODE transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR II %1 □““TT 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector-Base Voltage v CBO -3 0 Vdc Collector-Emitter Voltage

Contextual Info: MSA1022BT3 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MSA1022CT3 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

MSG100L41

Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41

MSA-1000

Abstract: MSA-1000-GP4
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1000 amplifiers in industrial and military systems. Features • High Output Power: +27 dBm Typical P1dB at 1.0␣ GHz 3 • Low Distortion: 37 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at

SV1 3101

Abstract: MSA-100GLH 700127 FX10A-168S-SV SV1 3203
Contextual Info: 10+Gbps 0.5mm pitch Stacking Connectors FX10 Series Electrical Interface for the OIF 100G Long-Haul DWDM Transmission Module MSA-100GLH •Mechanical Features ● 0.5mm Pitch ● Stacking Height : 4 ~ 8mm ● Number of Contacts With ground plate type : 80 / 100 / 120 / 140

MSA103

Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 MSA112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PTB23001X; PTB23003X;

HP MMIC INA

Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Contextual Info: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF

Contextual Info: data sheet AVANTEK MSA-1023 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 230 mil BeO Flange Package Features • • • • • High Output Power: +27 dBm typical Pi dB at 1.0 GHz Low Distortion:

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1023 Features This MMIC is designed for use in a push-pull configuration in a 25 i l system. The MSA-1023 can also be used as a single-ended amplifier in

LS2521

Abstract: IEEE-1014 GPIB-400 MSA13 transistor uPD7210 IEEE-488 general purpose interface bus AS C2 DAB Clock Radio service manual PD7210 DHDT IEEE1014
Contextual Info: GPIB-1014P User Manual June 1994 Edition Part Number 370944A-01 Copyright 1984, 1994 National Instruments Corporation. All Rights Reserved. National Instruments Corporate Headquarters 6504 Bridge Point Parkway Austin, TX 78730-5039 512 794-0100 Technical support fax: (800) 328-2203

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9