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    MRF164W Search Results

    MRF164W Datasheets (1)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF164W
    Unknown FET Data Book Scan PDF 55.95KB 1

    MRF164W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MRF164W

    Contextual Info: MOTOROLA Order this document by MRF164W/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF164W N–Channel Enhancement Mode Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Guaranteed Performance at 400 MHz, 28 Vdc


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    mrf164

    Abstract: MRF164W
    Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF164W N-Channel Enhancement Mode D e sig n e d p rim a rily fo r w id e b a n d la rg e -s ig n a l o u tp u t and d riv e r sta g e s to 500 M Hz. • G u a ra n te e d P e rfo rm a n ce at 4 0 0 M H z, 28 Vdc


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    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original
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    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    MFQ960C

    Abstract: MLPI MPF6860 MPM3002 mrf151g 300 MFQ930C MFQ990C MGM20N45 MGM20N50 MGP20N45
    Contextual Info: 277 - tt f M. A 1- Vd s or € * £ Vg s W. t S T a = 2 5 cC Ig s s Pd Id loss th) F Ds(on) Vd s * ‘ 14 (Ta=25°C) b(on) Ciss g fs Coss Crss * /CH * /CH Vg s (V) (A) <nA) CW) min max (V) (V) (V) (V) (UA) (*typ) (max) Id OnA) Vd s ft B m % V g s =0 Vg s


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    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


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    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    VK200 INDUCTOR

    Abstract: MRF164 gogo board MRF164W inductor vk200 vk200
    Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F164W The RF TMOS Line P o w er Field E ffe c t Transistor Motorola Preferred Devices N-Channel Enhancement Mode Designed primarily for wideband large-signal output and driver stages to 500 MHz. • Guaranteed Performance at 400 MHz, 28 Vdc


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