MR826 Search Results

Contextual Info: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._

Contextual Info: MR820. MR826 5 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. 8.7 ± 0.3 59.5 ± 1 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

M70X

Abstract: Fagor GP
Contextual Info: -57E D FAGOR BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,

MR826

Abstract: MR821 MR826 diode MR820 MR822 MR824 MR826 equivalent MR-820
Contextual Info: MR820. MR826 5 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. 8.7 ± 0.3 59.5 ± 1 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

DR820

Abstract: MR826 diode
Contextual Info: Looking For: MR820, MR821, MR822, MR824, MR826 Replacements? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP LEAD MOUNT FAST RECOVERY BUTTON DIODES MECHANICAL SPECIFICATION FEATURES

MR826 diode

Abstract: MR824 MR821 MR826 equivalent MR820 MR822 DR820-1A MR826 3501S
Contextual Info: Looking For: MR820, MR821, MR822, MR824, MR826 Replacements? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP LEAD MOUNT FAST RECOVERY BUTTON DIODES MECHANICAL SPECIFICATION FEATURES

MR822

Abstract: mr821 MR826 MR824 A JR 3221 MR826 equivalent
Contextual Info: M MR820 MR821MR822 MR824 MR826 M O T O R O L A S U B M IN IA T U R E SIZE, A X IA L LEAD M O UNTED FAST REC O V ER Y POWER R E C TIF IE R S FAST REC OVERY POWER R E C TIF IE R S . . . designed f o r special a p p lic a tio n s such as d c p o w e r supplies,

r821 diodes

Abstract: MR826 diode CR72 mr826 MR821 MR826 equivalent diode sg 5 ts MR822 mr820 motorola
Contextual Info: MOTOROLA SC DIODES/OPTO b4E b3b7S5S D OQflbmM TET •MOT? MR820 MR821 MR822 MR824 MR826 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MR822 and MR826 are Motorola Preferred Devices D o s ì ì ì 'i u m -s D a t a S h e e t FAST RECOVERY POWER RECTIFIERS SUBMINIATURE SIZE, AXIAL LEAD MOUNTED

RECTIFIER DIODES Motorola mr 820

Abstract: diode p6000 MR826 equivalent diode p6000 j MR821 MR822 MR826 p6000 diode Variac MR826 diode
Contextual Info: MR820,MR821,MR822, MR824.MR826 D a t a S h e e t FA S T R E C O V E R Y POWER R E C T IF IE R S SU BM IN IA TU R E S IZ E , A X IA L L E A D MOUNTED FA S T R E C O V E R Y POWER R E C T IF IE R S 50-600 V O LTS 5.0 A M PERES . . . designed for special applications such as dc power supplies,

FA60R

Abstract: HVR062 MR820 MR826 3C63
Contextual Info: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._

Contextual Info: FÂGOR MR820. MR826 Dimensions in mm. P-6 Plastic Voltage 50 to 600 V Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point, 4 mm. • High current capability

D0201AE

Abstract: rm 826 FA60R L105 MR820 MR826 D0-201AE
Contextual Info: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._

GP 821

Abstract: Fagor GP diode FAG 50 MR820GP MR822 GP 826 MR824
Contextual Info: -57E D FAGOR BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,

MR826

Abstract: Fagor GP C5000/3300 HVR062 MR820GP
Contextual Info: -57E D BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP FAGOR MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,

2n222 TRANSISTOR

Abstract: transistor 2n222 of diode 2n222 1N493 mje5742g mje20 2n2905 time delay relay high voltage fast switching transistor for ignition coil drivers application Ferroxcube core 2N2905 transistor
Contextual Info: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

mje13009g

Abstract: MJE130 2N2222 transistor to drive a relay MJE13009 MJE13009D
Contextual Info: MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

MJE13003K

Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

equivalent mje13005

Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

equivalent mje13005

Abstract: 1N4933 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

mje13003

Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

equivalent mje13005

Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.