MMBT5401 Search Results

marking code g1

Abstract: G1 TRANSISTOR SOT 23 PNP
Contextual Info: MMBT5551 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT5401 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3A (4 to< 8 kV) MECHANICAL DATA • Case: SOT-23 Plastic

Contextual Info: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A C TOP VIEW Mechanical Data

MMBT5401-G

Abstract: 1N914
Contextual Info: Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE MMBT5401GH ƽ We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit V CBO V EBO – 150

2L smd transistor

Contextual Info: Transistors Transistor T SMD Type Product specification KMBT5401 MMBT5401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High Voltage Transistors 0.4 3 1 0.55 Pb-Free Packages are Available 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

marking G1 sot-23

Abstract: MMBT5401 MMBT5551 MARKING G1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1

MMBT5401W

Abstract: MMBT5551W
Contextual Info: MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE A L Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

Contextual Info: MMBT5401 High Voltage PNP Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER WEITRON http://www.weitron.com.tw SOT-23 MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit

Contextual Info: MCC TM Micro Commercial Components MMBT5401
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Plastic Encapsulate Transistor Halogen free available upon request by adding suffix "-HF"

Contextual Info: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO

1N914

Abstract: MMBT5401LT1G MMBT5401LT3G
Contextual Info: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage

MMBT5401

Abstract: MMBT5400 MMBT5550 MMBT5551
Contextual Info: MMBT5400 / MMBT5401 MMBT5400 / MMBT5401 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-05-16 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case

Contextual Info: MMBT5551 160V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • BVCEO > 160V Ideal for Low Power Amplification and Switching Complementary PNP Type Available MMBT5401 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Contextual Info: MCC TM Micro Commercial Components MMBT5401
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • PNP Plastic Encapsulate Transistor Collector Current: ICM=0.6A Collector-Base Voltage: V BR CBO=160V

MMBT5401

Contextual Info: MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage

Contextual Info: RECTRON SEMICONDUCTOR MMBT5401LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation O PCM: 0.3 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 160 V * Operating and storage junction temperature range

Contextual Info: MMBT5551 SPICE MODEL: MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 A · · · · · · Min Max A

k4m sot 23

Abstract: MMBT5401 K4m transistor
Contextual Info: SPICE MODEL: MMBT5401 MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

MMBT5401

Abstract: mark B1 sot23
Contextual Info: MMBT5401 MMBT5401 PNP General Purpose Amplifier • This device is designed as a general purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted

1N914

Abstract: MMBT5401LT1
Contextual Info: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –150 Vdc Collector–Base Voltage VCBO –160 Vdc Emitter–Base Voltage VEBO –5.0

Contextual Info: Discontinued Closest Alternative Part is MMBT5401 SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 – SEPTEMBER 95 ✪ COMPLIMENTARY TYPE — BSS64 PARTMARKING DETAIL — BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE

Contextual Info: MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Low Power Amplification and Switching

2N5401

Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO

Contextual Info: MMBT5401WT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −150 Vdc Collector −Base Voltage