MMBT50 Search Results

MMBT5089

Abstract: MMBT5088
Contextual Info: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

IC-3035

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1 MMBT5088 m182 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 5088LT 15089LT1 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

br1271

Abstract: high gain low noise 2n BF112
Contextual Info: • S fê M IC O N D U G T O P ï ■>« 2N5088 2N5089 MMBT5088 MMBT5089 SOT-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA.

Contextual Info: ON Semiconductort Low Noise Transistor MMBT5087LT1 PNP Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −50 Vdc Collector−Base Voltage VCBO −50 Vdc Emitter−Base Voltage VEBO −3.0 Vdc IC −50 mAdc Collector Current — Continuous

MMBT5088LT1

Contextual Info: MMBT5088LT1 SOT-23 TRANSISTOR Description SOT-23 Medium Power Amplifier. NPN Silicon Transistor. 3 Features Large collector current:I Cmax =50mA 1 Low collector saturation voltage h FE RANK enabling low voltage operation 2 3 1 1.BASE 2.EMITTER 3.COLLECTOR

MMBT5088

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1
Contextual Info: MOTOROLA Order this document by MMBT5088LT1/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors MMBT5088LT1 MMBT5089LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 5088LT1 5089LT1 Unit Collector – Emitter Voltage

BTS089

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

MMBT5088

Abstract: MMBT5089
Contextual Info: MAXIMUM RATINGS Value Rating Symbol MMBT5088 MMBT5089 v CEO 30 25 Vdc Collector-Base Voltage v CBO 35 30 Vdc Emitter-Base Voltage V ebo 4.5 Vdc 'C 50 mAdc Collector-Emitter Voltage Collector Current — Continuous Unit MMBT5088LT1 MMBT5089LT1* CASE 318-07, STYLE 6

MMBT5087

Abstract: BF254
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

MARKING 1R SOD-123

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors MMBT5088LT1 MMBT5089LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 5088LT1 5089LT1 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

MMBT5088

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1
Contextual Info: MOTOROLA Order this document by MMBT5088LT1/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors MMBT5088LT1 MMBT5089LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 5088LT1 5089LT1 Unit Collector – Emitter Voltage

Contextual Info: Low Noise Transistor PNP Silicon MMBT5087LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

2N5086

Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5087 . 14E ° | fl J | 0007575 PNP EPITAXIAL SILICON TRANSÌSTOR T LOW NOISE TRANSISTOR - 3 9 - ñ SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: ON Semiconductort MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol 5088LT1 5089LT1 Unit Collector −Emitter Voltage VCEO 30 25 Vdc Collector −Base Voltage VCBO 35 30 Vdc Emitter −Base Voltage

MMBT5089LT1

Abstract: 5089LT1
Contextual Info: ON Semiconductort MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating 1 Symbol 5088LT1 5089LT1 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage

F 1.0K 250

Abstract: mmbt5087lt1
Contextual Info: ON Semiconductort Low Noise Transistor MMBT5087LT1 PNP Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –50 Vdc Collector–Base Voltage VCBO –50 Vdc Emitter–Base Voltage VEBO –3.0 Vdc IC –50 mAdc Collector Current — Continuous

2N5087 equivalent

Abstract: 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild
Contextual Info: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62.

Contextual Info: Low Noise Transistor PNP Silicon MMBT5087LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

MMBT5087

Contextual Info: MMBT5087 PNP Silicon Epitaxial Planar Transistor for general purpose application SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage

Contextual Info: MMBT5088LT1G, MMBT5088LT1G, MMBT5089LT1G, MMBT5089LT1G Low Noise Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBT5088LT1 MMBT5089LT1* Low Noise Transistors NPN Silicon 'Motorola Preferred Device MAXIMUM RATINGS Sym bol 5088LT1 5089LT1 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage VCBO 35 30 Vdc R ating

Contextual Info: B 6M SQ aH D U dT Q H j 2N5088 2N5089 MMBT5088 MMBT5089 SO T-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07.