MMBT4401 Search Results

sot-323 code 50k

Contextual Info: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR

K2X pnp

Abstract: K2X TO J-STD-020A MMBT4401 MMBT4401-7 MMBT4403
Contextual Info: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT4401 Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching SOT-23 A C Mechanical Data · · ·

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

Contextual Info: MMBT4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMBT4401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

MMBT4401

Abstract: MMBT4403
Contextual Info: MMBT4401 MMBT4401 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-05-09 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1

Contextual Info: NEW PRODUCT NEW PRODUCT MMBT4401 SMALL SIGNAL TRANSISTORS NPN SOT-23 FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) ♦ As complementary type, the PNP transistor MMBT4403 is recommended.

2n4401 052

Abstract: transistor 2n4401 equivalent TS36
Contextual Info: MMBT4401 Small Signal Transistor NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.037 (0.95) 0.037 (0.95) .007 (0.175) .005 (0.125) 0.079 (2.0) 0.035 (0.9) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95)

Contextual Info: NEW PRODUCT NEW PRODUCT MMBT4403 SMALL SIGNAL TRANSISTORS PNP SOT-23 FEATURES ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. .122 (3.1) .118 (3.0) .016 (0.4) ♦ As complementary type, the NPN transistor MMBT4401 is recommended.

Contextual Info: MMBT4401 Switching Transistor NPN Silicon COLLECTOR 3 3 * “G” Lead Pb -Free 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

K2t transistor

Abstract: J-STD-020A MMBT4401 MMBT4403
Contextual Info: MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary NPN Type Available MMBT4401 Ideal for Medium Power Amplification and Switching SOT-23 A C B B TOP VIEW E Mechanical Data · · · · · ·

MMBT4403

Abstract: MMBT4401 MMBT4403 2T
Contextual Info: MMBT4403 PNP General Purpose Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMBT4401 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)

transistor m4a

Contextual Info: DATA SHEET MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225mW FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 600mA Both normal and Pb free product are available : Normal : 80~95 % Sn, 5~20 % Pb

mmbt4401lt1g

Abstract: MMBT4401LT1 MMBT4401LT3G
Contextual Info: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage

MMBT4401W

Contextual Info: MMBT4401W NPN Silicon Switching Transistor Elektronische Bauelemente RoHS Compliant Product A SOT-323 L Dim COLLECTOR 3 B S Top View 3 1 BASE V G 1 2 EMITTER 2 C H D J K MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • • • • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation

Contextual Info: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1  ESD Rating: Human Body Model; 4 kV, http://onsemi.com Machine Model; 400 V  These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors MMBT4401T SOT-523 TRANSISTOR NPN FEATURES z Epitaxial Planar Die Construction z ComplementaryPNP Type Available(MMBT4403T) z Ultra-Small Surface Mount Package z Also Available in Lead Free Version

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 0.3 W (Tamb=25℃) PCM: Collector current 0.6 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBT4401W NPN Silicon General Purpose Transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V IC 600 mA Total Power Dissipation Ptot 200

1N916

Abstract: MMBT4401LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT4401LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage

fairchild sot-23 Device Marking 2xk

Abstract: MMBT4401K
Contextual Info: MMBT4401K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 60 V VCEO Collector-Emitter Voltage

TRANSISTOR m3a

Contextual Info: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES 0.120 3.04 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40) Complimentary (NPN) device: MMBT4401

Contextual Info: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.120(3.04) 0.110(2.80) • Collector current I C = 600mA