MMBF545 Search Results

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

Contextual Info: MMBF5457LT1 Preferred Device JFET − General Purpose Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE 3 GATE MAXIMUM RATINGS Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Drain−Gate Voltage VDG 25 Vdc VGS r

Contextual Info: MMBF5459LT1 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15 V(GS)off Min. (V)2.0

6D SOT-23

Abstract: 6D SOT23 transistor 6D sot23 MMBF5457LT1
Contextual Info: MMBF5457LT1 Preferred Device JFET - General Purpose Transistor N−Channel http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Drain−Gate Voltage VDG 25 Vdc VGS r −25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8

MMBF5459LT1

Contextual Info: MOTOROLA Order this document by MMBF5459LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor M M BF5459LT1 N-Channel 2 SOURCE MAXIMUM RATINGS Rating CASE 318-08, STYLE 10 SO T -23 TO-236AB Symbol Value Unit Vd G 25 Vdc VGS(r) -2 5 Vdc 'G 10 mAdc Symbol Max

2N5457 MOTOROLA

Abstract: transistor 2N5457
Contextual Info: MMBF5459LT1* M A X IM U M R A T IN G S Rating Drain-Gate Voltage Reverse G ate-Source Voltage Gate C urrent Symbol Value Unit V DG 25 Vdc VGS r > -2 5 Vdc 'G 10 m Adc Symbol Max Unit Pd 225 mW 1.8 mW;"C r o ja 556 c/w T j- Tstq - 55 to + 150 °c CASE 318-07, STYLE 10

transistor 6D sot23

Abstract: transistor jfet 2N5457 MMBF5457LT1
Contextual Info: MMBF5457LT1* M A XIM U M RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GS r 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 m w rc Roja 556 °C/W TJ' Tsta - 55 to +150 °C Reverse Gate-Source Voltage Gate Current

2N5457

Contextual Info: M lC O N D U C T O R tm MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 * TO-92 SOT-23 S Mark: 6 D / 6 1 S / 6 L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

MMBF5457LT1

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5457LT1 N–Channel 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc Reverse Gate–Source Voltage Gate Current

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5457LT1 N–Channel 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc Reverse Gate–Source Voltage Gate Current

MMBF5459LT1

Contextual Info: MOTOROLA Order this document by MMBF5459LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor MMBF5459LT1 N–Channel 2 SOURCE 3 GATE 3 1 1 DRAIN 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB Symbol Value Unit VDG 25 Vdc VGS(r) – 25

MMBF5457LT1

Abstract: transistor 6D sot23
Contextual Info: MOTOROLA Order this document by MMBF5457LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Ċ General Purpose Transistor MMBF5457LT1 N–Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage

2N5458 NATIONAL SEMICONDUCTOR

Abstract: 2N5457 2N5459 2n5458
Contextual Info: Semiconductor 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 S Mark: 6 D / 6 1 S / 6 L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET — General Purpose Transistor MMBF5457LT1 N—Channel 2 s o u rc e MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating Vd S 25 Vdc Drain-Gate Voltage Vd G 25 Vdc v GS r 25 Vdc Ig 10 mAdc Symbol Max Unit

2N5457

Abstract: 2N5458 2N5459 2N5458 equivalent 2N5457 datasheet transistor 2N5457 2N5459 common drain fairchild 2n5458 equivalent 2N5459 61s or gate
Contextual Info: MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 G D G S TO-92 S SOT-23 D Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

Contextual Info: MMBF5457LT1 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15 V(GS)off Min. (V).50

Contextual Info: MMBF5459 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF5457 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

MMBF5457LT1

Abstract: MMBF5457LT1G
Contextual Info: MMBF5457LT1 Preferred Device JFET − General Purpose Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Drain−Gate Voltage VDG 25

transistor 2N5457

Abstract: transistor 6D sot23 MMBF5457LT1
Contextual Info: MMBF5457LT1* M AXIM UM RATIN GS Rating Symbol Value VDS 25 Vdc Drain-Gate Voltage VDG 25 Vdc v GSIrl 25 Vdc 'G 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW X r 9JA 556 6C/W Tj- Tstq - 5 5 to +150 ÙC Reverse Gate-Source Voltage Gate Current CASE 318-07, STYLE 10

transistor 2N5457

Abstract: jfet transistor N-Channel JFET transistor transistor jfet 2N5457 JFET 2N5457
Contextual Info: MMBF5459LT1* MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Symbol Value Unit Vd G 25 Vdc Vg s W -2 5 Vdc 'g 10 mAdc Symbol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/W TJ. TstH -5 5 to +150 °C CASE 318-07, STYLE 10

BF5457

Abstract: MMBF5457LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T — General Purpose Transistor MMBF5457LT1 N-Channel 2source 1 MAXIMUM RATINGS Symbol Value Unit D rain-Source Voltage Rating V DS 25 Vdc D rain-G ate Voltage VDG 25 Vdc VGS r 25 Vdc 10 mAdc Symbol Max Unit Pd 225

N5458

Abstract: N5457 2NS457 2N5458 2N5459 common drain 2N5457 2N5459 MMBF5457 MMBF5458 MMBF5459
Contextual Info: S e m i c o n d u c t o r 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 S M a rk : 6 D / 6 1 S / 6 L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

W609

Abstract: MMBF5459LT1 SIP SOT 23 bergquist ge MARKING ZE SOT-23 KH SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMBF5459LT1/D DATA — JFET Wansistor N-Channel I I I MMBF5459LTI I ? SOURCE G~TE Y 1DRAIN MNIMUM RATINGS Rating Drain-ate Voltage I Symbol Value Unit VDG 25 Vdc 1 THERMAL 1 [ .:?,ti CHARACTERISTICS