MG100 Search Results

MG100Q2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:

ic 109b

Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Contextual Info: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling

BY575

Contextual Info: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage

MG100G1AL3

Abstract: MG100G1AL3 5 IP100A MG100G1AL CB600 mg100g
Contextual Info: MG100G1AL3 — SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current: Gain : hpj;=100 Min. (Ic=100A) . Low Saturation Voltage: VcE(sat)=2V(Max.)

MG30H1BL1

Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
Contextual Info: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL

Contextual Info: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)

MG100M2CK1

Abstract: npn 1000V 100a 1000v, NPN 100A
Contextual Info: MG100M2CK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 F r e e Wheeling Diodes are Built-In to 1 Package. . High DC Current G a i n : h F E = 1 0 0 M i n . (Ic=100A)

MG100J6ES1

Abstract: MG100J6
Contextual Info: MG100J6ES1 GTR MODULE SILICON N CHANNEL IGBT TENTATIVE HIGH P O W E R S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. . 6 I G BTs are B u i l t I n t o 1 P a c k a g e . . Enhancement-Mode . Low Saturation Voltage : V CE s a t = 4 . 0 V ( M a x . )

MG100G2DL1

Abstract: IP100A
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G2DL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-In Free Wheeling Diode . High DC Current Gain : hpE=100 Min. (Ic=100A) . Low Saturation Voltage

Contextual Info: MG100J7KS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package. Enhancement-Mode

MG100Q1ZS50

Contextual Info: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode

RG130

Abstract: 100J2Y MG100J2YS50 G2NL
Contextual Info: TOSHIBA MG100J2YS50 MG1 0 0 J 2 Y S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One

dc to dc chopper using igbt

Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
Contextual Info: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

Contextual Info: TOSHIBA {DISCRETE/OPTO} TD 9097250 TOSHIBA DISCRETE/OPTO $ O ifììb i BE|.ciOcì7aSD DOlbSbS 90D 16265 SEMICONDUCTOR DT-33“35‘ MG10ÓH2CL1 MG100H2DL2 TECHNICAL DATA MGI00H2CL1 Weight : 205g Unit in m El 63 lisL a5 JAPA'N CZ ll?f\ 158 I17.S 6-MS 4,-05.*

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)

MG100Q1ZS40

Abstract: ED 05 Diode
Contextual Info: TO SHIBA MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/*s Max. trr= 0.5/^s (Max.) • Low Saturation Voltage : v CE(sat) = 4 -o v (Max.)

transistor s51a

Contextual Info: MG100Q2YS51A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)

gyration MG100

Abstract: gyration mg100 MG100s amplifier schematic schematic Schematics
Contextual Info: Sample MG100 Schematics and for Gyropoint the ASIC This document contains sample schematics for a variety of application circuits. These schematics are provided as a helpful reference tools for developers. Gyration offers these circuits in schematic design form only, there are no associated fabricated

MG100G2YL1

Contextual Info: G TR MODULE MG100G2YL1 SIUCON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 6 - F A S T - O N - T A B 4 110 . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 M i n . (Ic=100A)

MG100H2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf = 1. O/js M a x . trr= 0 . 5 y s ( M a x .) . Low Saturation Voltage : V c E ( s a t )=5.O V (

Contextual Info: TO SHIBA MG100J6ES50 MG1 0 0 J 6 E S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs Built Into 1 Package.

MG100Q1ZS50

Abstract: 9416 Diode
Contextual Info: TOSHIBA MG100Q1ZS50 MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Induetive Load Low Saturation Voltage : VCE (sat) = 3-6 v (Max.)

MG100J1BS11

Abstract: c40f
Contextual Info: MG100J1BS11 TOSHIBA TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT MG 100J1B S 1 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • High Input Impednace H ighspeed : tf=1.0/«s Max. (l£ = 100A) Low Saturation Voltage : V cE(sat) = 2-?V (Max.) (IC = 100A)

Contextual Info: MG100Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode