MDD310 Search Results

E72873

Abstract: MDD310 MDD310-06N1 MDD310-08N1 MDD310-12N1 MDD310-14N1 MDD310-16N1 RW45
Contextual Info: 4fc.flb22b 0001724 775 M I X Y n ixY S Diode Modules MDD310 lTAV =2 x 305 A < V < V rw I VRRM = 600-1600 V Type T h r e a d e d s p a c e r fo r h ig h e r A n o d e / V e r s io n 1 C a t h o d e c o n s tru c tio n : T y p e Z Y 250, m a te ria l b ra s s

diode 718

Abstract: LTO-DMS Semiconductor MDD310-18V 50hz to 60hz converter LTO-DMS Semiconductor Corporation MDD310-08V MDD310-12V MDD310-14V Lto-dms MDD310-20V
Contextual Info: LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn, LTO-DMS New York, 11228, USA Tel: 718 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 MDD310-08V thru MDD310-22V Diode/Diode Module 3 2 VRSM V VRRM V 900 1300 1500 1700 1900 2100

Contextual Info: DIXYS MDD310 IFRMS High Power Diode Modules ^ FAVM 2 x 480 A 2 x 305 A vRRM 800 -1600 V Type 800 1200 1400 1600 900 1300 1500 1700 Maximum Ratings A 480 A 305 Symbol Test Conditions Urms Uavm TVJ — Tc = 100°C; 180° sine ^FSM TVJ = 45°C; VR= 0 t = 10 ms 50 Hz , sine

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

mm036

Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA

VUO52

Abstract: vuo36
Contextual Info: Rectifier Diode Chips DWN = cathode on top, DWP = anode on top Type V RRM V IR max 25 °C IR typ 150 °C mA mA VF ¬ @ I F VTO rT Tj = 25 °C V V mΩ Ω IF AV M @ Rthjh A Chips per Wafer 125 mm ∅ ¬ ­ Tj = 150 °C Th = 70 °C A K/W Equivalent type 716 ¯ DSP8-08/12

mdd 42

Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
Contextual Info: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA

MDD72-18N1B

Abstract: MD0500 14N1B MDD44-16N1B MDD 500-14N1 mdd26-16 16N1B mdd56-08n1b MDD250
Contextual Info: Diode Modules, ’ TA V ¡4- - - - - - - - h rî — Î- f, r| — 4— 4- Single and Dual I 1-N- ' Ì MDO 36-560 A Type A MDA 72-08N1B MDA 72-14N1B MDA 72-16N1B MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD26-16N1B MDD26-18N1B MDD44-08N1B MDD44-12N1B