MBR20H200CT Search Results

MBR20H200CT

Abstract: MBR20H200FCT
Contextual Info: E L E C T R O N I C MBR20H200CT/FCT Power Schottky Rectifier - 20Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

MBR20H100CT

Abstract: MBR20H200CT
Contextual Info: MBR20H100CT – MBR20H200CT Pb RoHS 20.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

Schottky

Abstract: MBR20H100CT
Contextual Info: MBR20H100CT thru MBR20H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBR20H100CT – MBR20H200CT Pb RoHS COMPLIANCE 20.0 AMPS. Schottky Barrier Rectifiers Switchmode Power Rectifiers TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

20h100

Abstract: 20H200C 20H150CT
Contextual Info: MBR20H100CT - MBR20H200CT CREAT BY ART Pb 20.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MBR20H100CT - MBR20H200CT 20.0AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop

Contextual Info: TAIWAN SEMICONDUCTOR s MBR20H100CT - MBR20H200CT 20.0 AMPS. Schottky Barrier Rectifiers RoHS TO-22QAB C O M P L IA N C E .11! /Vs\\*S. . K'>r Features •nrçin* P la 3 tic m a te r ia l u 3 e d c a r r i& 3 U n d e r w r it e r s L a b o r a t o r y C ie s s iilc & U o rv s 9 4 V - 0

MBRF 1010 OCT

Abstract: MBRF20H200CT
Contextual Info: MBR20H200CT, MBRF20H200CT, SB20H200CT-1 www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier Low Leakage Current 5.0 A TO-220AB FEATURES ITO-220AB • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency

MBRF20H200CT

Abstract: JESD22-B102D J-STD-002B MBR20H200CT SB20H200CT-1
Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

MBR20H100CT

Abstract: MBR20H200CT 20H100CT
Contextual Info: MBR20H100CT – MBR20H200CT Pb RoHS 20.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

MBR20H200CT

Contextual Info: Certificate TH97/10561QM MBR20H200CT Certificate TW00/17276EM Dual Schottky Barrier Rectifier TO-220AB PRV : 200 Volts Io : 20 Ampere 0.154 3.91 DIA. 0.415(10.54)MAX. 0.148(3.74) 0.113(2.87) 0.103(2.62) FEATURES : * * * * * 0.145(3.68) 0.135(3.43) 0.635(16.13)

Contextual Info: MBR20H100CT - MBR20H200CT CREAT BY ART 20.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MBR20H200CT ULTRA LOW IR SCHOTTKY RECTIFIERS VOLTAGE 200 Volt 20 Ampere CURRENT FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Low power loss, high efficiency. • High current capability

Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay Semiconductors Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB ITO-220AB Major Ratings and Characteristics IF AV 2 x 10 A VRRM 200 V IFSM 290 A VF 0.75 V Tj 175 °C 1

Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay Semiconductors Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB ITO-220AB Major Ratings and Characteristics IF AV 2 x 10 A VRRM 200 V IFSM 290 A VF 0.75 V Tj 175 °C 1

MBR20H100CT

Abstract: MBR20H200CT MBR20HXXCT T0220AB STR11
Contextual Info: E RoHS MBR20H100CT - MBR20H200CT TAIWAN SEM ICONDUCTO R 20.0 AMPS. Schottky Barrier Rectifiers TQ-220AB COMPLIANCE .It ' I Features P la a tic m a te ria l U3ad c a r r ie s W 3 S I in : TFtin* r • ■ U n c te rw rite re L a b o ra to r y C ie s s lilc a u o rtè 9 4 V -0

Contextual Info: MBR20H100CT thru MBR20H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBR20H100CT thru MBR20H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

MBR20H200CT-E3/45

Abstract: JESD22-B102 J-STD-002 MBR20H200CT MBRF20H200CT SB20H200CT-1
Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop

Contextual Info: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop