MBR10H200CT Search Results

10H150CT

Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
Contextual Info: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction

MBR10H200CT

Abstract: MBR10H100CT
Contextual Info: RATINGS AND CHARACTERISTIC CURVES MBR10H100CT THRU MBR10H200CT Version: E10

Schottky

Abstract: MBR10H200CT C0
Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

10h100c

Contextual Info: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars

MBR10H200CT

Abstract: 10H150CT MBR10H100CT
Contextual Info: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency

1da marking

Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
Contextual Info: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion

Contextual Info: MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop

MBR10H100CT

Contextual Info: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

10H150CT

Abstract: 10H200CT
Contextual Info: MBR10H100CT - MBR10H200CT CREAT BY ART Pb 10.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

10H150CT

Contextual Info: MBR10H100CT - MBR10H200CT Pb RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers Switchmode Power Rectifiers TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

10H150CT

Abstract: MBR10H100CT
Contextual Info: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency