MAY1998 Search Results

IC 630 ONLY WRITTEN APPLICATION 16 PIN

Abstract: quanta
Contextual Info: UT130-AP Associative Processor Advanced Product Information May1998 FEATURES q Compresses any length key data into information icons q Powerful sliding windows search engine Scalable to interface with any size memory - Uses memory efficiently - Performance unaffected by size

Contextual Info: ISSI IS61SF12836 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION MAY1998 FEATURES DESCRIPTION • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 11 ns The IS 6 1 S F 1 2 8 3 6 is a h ig h -s p e e d , lo w -p o w e r synchronous static RAM designed to provide a burstable,

COP888EG

Abstract: CRC16 M28B USBN9602 USBN9602-28M
Contextual Info: May1998 USBN9602 Universal Serial Bus Full Speed Function Controller With DMA Support 1.0 General Description The USBN9602 is an integrated USB Node controller compatible with the USB Specification Version 1.0. Integrated onto a single IC are the required USB transceiver with a

80C51

Abstract: 80C52 IS89C51 AD685
Contextual Info: ISSI IS89C51 CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 4-Kbytes of FLASH PRELIMINARY MAY1998 FEATURES GENERAL DESCRIPTION • 80C51 based architecture The IS S IIS89C51 is a high-performance microcontroller fabricated using high-density CMOS technology. The

JJ7N

Contextual Info: IS61SF12836 v 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 11 ns • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control

transistor C9012

Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
Contextual Info: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.

PSD4xx

Abstract: difference between 68hc12 and 80c196 CLDCC68 plcc 68 PLCC 68 intel ZPSD411A2-C-70J ST psd413a1-c-90ji microcontroller based automatic power factor control PSD403A1-C-90UI PSD411A2-C-70J
Contextual Info: PSD4XX ZPSD4XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD4XX – 2.7 to 5.5 V for PSD4XX-V Up to 1 Mbit of UV EPROM Up to 16 Kbit SRAM Input Latches

psd4xx

Abstract: TQFP68 PSD411A2-C-70J CLDCC68 psd403a2-c-90
Contextual Info: PSD4XX ZPSD4XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD4XX – 2.7 to 5.5 V for PSD4XX-V ■ Up to 1 Mbit of UV EPROM ■ Up to 16 Kbit SRAM

76137S

Abstract: 76137P HUF76137P3 AN9321 AN9322 HUF76137S3S HUF76137S3ST TB334
Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

XR88C192

Abstract: Crystal X9S SC26C92 SCC2692 XR88C92 XR88C92CJ XR88C92CP XR88C92CV XR88C92IJ XR88C92IP
Contextual Info: Preliminary Information EXAR XR88C92/192 DUAL UNIVERSAL ASYNCHRONOUS RECEIVER AND TRANSMITTER DESCRIPTION The XR88C92/192 is a Dual Universal Asynchronous Receiver and Transmitter with 8 XR88C92 / 16 (XR88C192) bytes transmit and receive FIFO. The XR88C92/192 is a pin and functional replacement for the

76137P

Abstract: 76137S TA7613 75E1 AN9321 AN9322 HUF76137P3 HUF76137S3S HUF76137S3ST TB334
Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 37P UF76 7S3 bt A, V, 09 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.

28F008SA

Abstract: E28F008SA LH28F008SAT
Contextual Info: a H/HITE /MICROELECTRONICS WPF29160-120G1XX 16MBYTE 4x1Mx32 FLASH (5VSupply; 12V Program) SIM M MODULE PRELIMINARY* FEATURES GENERAL DESCRIPTION • A c c e s s T im e of 1 2 0 n s T h e W h it e M ic r o e le c t r o n ic s W P F 2 9 1 6 0 -1 2 0 G 1 X X is a 4 x 1 M x 3 2

76137P

Abstract: 76137s
Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

ZPSD301B-90JI

Abstract: STMicroelectronics date code format ZPSD302B-90JI PSD312-B-15J 80C18 PLD Programming Information ZPSD301V-B-25J
Contextual Info: PSD3XX ZPSD3XX ZPSD3XXV PSD3XXR ZPSD3XXR ZPSD3XXRV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD3xx, ZPSD3xx, PSD3xxR, ZPSD3xxR s t c u d o ) r s ( P t c e t

L1711

Contextual Info: S i M IT E L SL2017 _ Full Band Satellite Tuner S E M IC O N D U C T O R r.Prelim i inary i t Inform ation D S 4 8 8 9 - 1.2 m a y 1998 The SL2017 is a fully integrated mixer with output AGC, intended primarily for application in satellite tuners, where it

PSD503B1-C-70J

Abstract: psd5xx PSD503B1 15A 9314
Contextual Info: PSD5XX ZPSD5XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD5XX – 2.7 to 5.5 V for PSD5XX-V ■ Up to 1 Mbit of UV EPROM ■ Up to 16 Kbit SRAM

psd5xx

Abstract: 1994 datasheet MICROCONTROLLER 8031 80C196 assembly language counter driver cmos PSD503B1 TQFP68
Contextual Info: PSD5XX ZPSD5XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD5XX – 2.7 to 5.5 V for PSD5XX-V Up to 1 Mbit of UV EPROM Up to 16 Kbit SRAM Input Latches

Marking STMicroelectronics

Contextual Info: STD3NB50 STD3NB50-1 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD3NB50 500 V < 2.8 Ω 3A STD3NB50-1 500 V < 2.8 Ω 3A FEATURES SUMMARY • TYPICAL RDS(on) = 2.5 Ω

76137s

Abstract: 76137P AN9321 AN9322 HUF76137P3 HUF76137S3S HUF76137S3ST TB334 ta76137
Contextual Info: HUF76137P3, HUF76137S3S Data Sheet 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

PSD411A2-C-70J

Abstract: ZPSD411A2-C-70J psd4xx WSI zpsd ordering 100 20L A1 diode 403A1
Contextual Info: PSD4XX ZPSD4XX Low Cost Field Programmable Microcontroller Peripherals NOT FOR NEW DESIGN FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD4XX – 2.7 to 5.5 V for PSD4XX-V ■ Up to 1 Mbit of UV EPROM ■ Up to 16 Kbit SRAM

d3nb5

Abstract: D3NB50 diode k 0368 marking c2 diode STD3NB50 STD3NB50-1 STD3NB50T4
Contextual Info: STD3NB50 STD3NB50-1 N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STD3NB50 500 V < 2.8 Ω 3A STD3NB50-1 500 V < 2.8 Ω 3A FEATURES SUMMARY • TYPICAL RDS(on) = 2.5 Ω

psd3xx

Abstract: WSI PSD312-b PA510 PSD301 CS10 PQFP44 PSD301R PSD302R PSD311R TQFP44
Contextual Info: PSD3XX ZPSD3XX ZPSD3XXV PSD3XXR ZPSD3XXR ZPSD3XXRV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD3xx, ZPSD3xx, PSD3xxR, ZPSD3xxR – 2.7 to 5.5 V for ZPSD3xxV, ZPSD3xxRV

N9321

Abstract: F7613 TA7613
Contextual Info: ? *3 2 £ HUF76137P3, HUF76137S3, HUF76137S3S 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 | Features Description w • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the