MAAMGM0002 Search Results

MAAMGM0002-DIE

Abstract: MAAMGM0002
Contextual Info: RO-P-DS-3047 -A- MAAMGM0002-DIE 0.1W Distributed Amplifier 1.0 – 20.5 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 1.0 - 20.5 GHz GaAs MMIC Amplifier 1.0 to 20.5 GHz Operation 0.1 Watt Saturated Output Power Level Select at Test Biasing Variable Drain Voltage 5-6V Operation

MAAMGM0002-DIE

Abstract: mmic distributed amplifier
Contextual Info: RO-P-DS-3047 A MAAMGM0002-DIE 0.1W Distributed Amplifier 1.0 – 18.0 GHz Preliminary Features ♦ ♦ ♦ ♦ Information 1.0 - 18.0 GHz GaAs MMIC Amplifier 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation Select-at-Test Biasing Self-Aligned MSAG MESFET Process

AN3016

Abstract: MAAMGM0002 MAAMGM0002-DIE MAAMGM0002-DIE-SMB MAAMGM0002-SMB MAAMGM-0002
Contextual Info: RoHS Compliant Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE Rev E Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 4 dB Typical Noise Figure Select-at-Test Biasing MSAG Process Description The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip

MAAMGM0002-DIE

Abstract: 10 ghz driver amplifier MAAMGM0002
Contextual Info: A SURFACE-MOUNT PLASTIC-PACKAGED 1 TO 18 GHZ LOW NOISE DRIVER AMPLIFIER W ith the introduction of the MAAMGM0002, M/A-COM adds a cost-effective, highly manufacturable surface-mount plastic-packaged wideband driver amplifier to its array of standard products.

DB21

Abstract: mmic distributed amplifier MAAMGM0002 MAAMGM0002-SMB
Contextual Info: Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002 903216 — PRELIMINARY INFORMATION Features Outline Drawing ♦ 0.1 Watt Saturated Output Power Level ♦ 4 dB Typical Noise Figure ♦ MSAG Process Description The MAAMGM0002 is a 0.1W Distributed Amplifier with on-chip bias

Contextual Info: RO-P-DS-3047 B Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation Select-at-Test Biasing Self-Aligned MSAG MESFET Process

MAAMGM-0002

Contextual Info: 1.0-18.0 GHz 0.1W Distributed Amplifier MAAMGM0002 RO-P-DS-3093 PRELIMINARY INFORMATION Outline Drawing Features ♦ 0.1 Watt Saturated Output Power Level ♦ 4 dB Typical Noise Figure ♦ MSAG Process Description The MAAMGM0002 is a 0.1W Distributed Amplifier with

Contextual Info: RO-P-DS-3047 C Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation 4 dB Typical Noise Figure Select-at-Test Biasing Self-Aligned MSAG MESFET Process

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

MAALGM0002-DIE

Abstract: MAAPGM0053-DIE MAAPGM0060 MAALGM0003-DIE MAAPGM0029 MAAPGM0026 MAPCGM0003-DIE MASWGM0005-DIE MAAPGM0038-DIE MAAPGM0021
Contextual Info: MMIC brochure_5.qxd 4/15/05 10:41 AM Page 1 We work with you M/A-COM has a dedicated product line providing GaAs MMICs to defense, space, and commercial markets. A team of experienced and recognized designers is available to develop MMICs for custom applications, and have