MA8051 Search Results

MA8051

Abstract: MA8047 MA8036 MAB030 MA7130 MA7160 MA7180 MA7200 MA7220 MA7240
Contextual Info: - y m MA7130 MA7150 MA7160 MA7180 MA7200 MA7220 MA7240 MA7270 MA7300 MA7330 MA7360 MA7390 MA7430 MA7470 MA7510 MA7560 MA8024 MA8027 MA8030 MA8033 MA8036 MA8039 MA8043 MA8047 MA8051 MA8056 MA8062 MA8068 MA8075 MA8082 MA8091 MA8100 MA8110 MA8120 MA8130 MA8140-M

MA8036

Abstract: MA8051 MAB030 MAS220 MA7130 MA7160 MA7180 MA7200 MA7220 MA7240
Contextual Info: - y m s a s m f MA7130 MA7150 MA 7160 MA7180 MA 7200 MA7220 MA7240 MA7270 MA7300 MA7330 të T të T fô T fô T të T fô T fâ T fô T MA7360 MA7390 MA 7430 MA7470 MA7510 fô T MA7560 MA8024 MA8027 MA8030 MA8033 fâ T fô T MA8036 MA8039 MA8043 MA8047 MA8051

MAB360

Abstract: mab100 MA4056 MA8051 MA4062 MA4062(H)-72 MA4100 MA4075N MA8027 MA4068(L)-Y
Contextual Info: Diodes # Zener Diodes MA4000 N Series (Low Noise, Low Operating Resistance) Zener Voltage V z(V ) 4.42- 4.90 4 .84- 5.38 5.32- 5.92 5.866.477.077.77- 6.53 7.14 7.83 8.63 8.57- 9.53 9.47- 9.85 10.45-11.56 11.43 -12.58 12.46-13.96 13.84 -15.51 15.38-17.08 16.94 -19.02

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

DIODE 709 1334

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

3224W-1-502E

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

IRL 724 N

Abstract: MRFG35010 MRFG35010AR1 MRFG35010R1 MTP23P06V RO4350 motorola diode marking 0103
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or

INF 740

Abstract: Motorola 581 c 1685 transistor 3224W-1-502E 901 704 16 08 55 DIODE Z1 04 833 motorola IRL 724 N Marking Z7 Gate Driver MRFG35010R1 MRFG35010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

a1024

Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Contextual Info: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

MA8120-M

Abstract: MA8056M Zener MA3100M MA8091-M MA8330-M MA8051-M MA8082M MA8051L MA8068-H MA8100-M
Contextual Info: MA111 Zener Diodes MA8000 Series Silicon planer type Unit : mm For stabilization of power supply ● Satisfactory in rise performance in the low-current range ● Easy-to-select voltage rank which are further subdivided ● Reliability equivalent to the conventional products Mini type guar-

L 3055 motorola

Contextual Info: MOTOROLA Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

NI-360HF

Abstract: MRFG35010 MTP23P06V RO4350 DIODE Z5
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35010/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from

RTL 602 W

Abstract: IC802 transistor T1J K40 fet IC-221 CN602 transistor k38 w7 transistor k79 VC175 DFJP050ZA002
Contextual Info: ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! "#$%#!&"'! $*+*,*-(,! ! ./012341! (567893:! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! (;<),!

MA2560

Abstract: MA3330 MA1180 Panasonic MA1056 MA1033 ma4300 zener panasonic diode MA4020 MA8180 DIODE D29
Contextual Info: Diode # Zener Diodes Line-up Zener Voltage Vz V MA1000 Series DO-35 (D28) PD = SOOmW MA2000 Series DO-41 (D29) PD = 1W MA3000 Series Mini Type 3 pins (D12) P d = 500mW 1 .8 8 - 2.24 MA1020 MA4020 2 .0 8 - 2.45 MA 1022 MA4022 2 .2 8 - 2.70 MA1024 MA3024 MA4024

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

POT 5K

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 7, 5/2006 Gallium Arsenide PHEMT MRFG35010R1 MRFG35010R5 RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or

Contextual Info: Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

Contextual Info: Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

MA8051CT-ND

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35010 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or

Contextual Info: Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010 Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or