MA738 Search Results

RB100A

Abstract: RK36 MA711A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

RK36

Abstract: RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

S3S4M

Abstract: NSQ03A02L S3S6M S1S6M RB100A RK14 RK36 RB031B-40 RB110c KS826S04
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1.5 A rectification is possible

Contextual Info: Schottky Barrier Diodes SBD MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1.5 A rectification is possible • Reverse voltage VR = 40 V is guaranteed

MA2Q738

Abstract: MA738
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3

S3S4M

Abstract: NSQ03A04 RK36 RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

MA2Q738

Abstract: MA738
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ ue pl d in

Contextual Info: MA111 Schottky Barrier Diodes SBD MA738 Silicon epitaxial planer type Unit : mm For high-frequency rectification 4.4±0.3 • Features Forward current (average) I F(AV) : 1.5A type ● Reverse voltage (DC value) VR : 40V ● Automatic insertion possible with emboss taping

RB100A

Abstract: RK36 MA701A MA711A RB110c HRW0503A KS826S04 MA701 MA711 MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 M Di ain sc te on na tin nc ue e/

MA2Q738

Abstract: MA738
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3

RK36

Abstract: RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

RB100A

Abstract: RB110c RK36 MA711A HRW0503A KS826S04 MA701 MA701A MA711 MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

RK36

Abstract: MA701A RB100A RB110c HRW0503A KS826S04 MA701 MA711 MA711A MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

Contextual Info: Schottky Barrier Diodes SBD MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • VR = 40 V is guaranteed • Automatic insertion with the emboss taping is possible

MA2Q738

Abstract: MA738
Contextual Info: Schottky Barrier Diodes SBD MA2Q738 (MA738) Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 • Forward current (average) IF(AV): 1.5 A type • Reverse voltage (DC value) VR: 40 V • Allowing automatic insertion with the emboss taping

MA2Q738

Abstract: MA738
Contextual Info: Schottky Barrier Diodes SBD MA2Q738 (MA738) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • VR = 40 V is guaranteed • Automatic insertion with the emboss taping is possible

Contextual Info: Voltage Regulators AN8016NSH Single-channel 1.8-volt step-up DC-DC converter control IC • Overview 5 6 4.3±0.30 0.625±0.10 +0.1 0.15–0.05 Overall height 1.7 max. 0.5±0.2 ■ Features 3.0±0.30 10 0.2±0.1 1 0.625±0.1 0.5 Unit: mm The AN8016NSH is a single-channel PWM DC-DC

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

3dt1

Contextual Info: Voltage Regulators AN8018SA 1.8-volt 2-channel step-up, step-down, or inverting DC-DC converter control IC Unit: mm • Overview The AN8018SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up, step-down and inverting voltages with a small number of external components.

4 terminal off line pwm switch

Abstract: BD NPN transistors single phase push pull inverters circuit diagram AN8016NSH AN8017SA AN8018SA MA2Q738 pin diagram 1K variable resistor
Contextual Info: Voltage Regulators AN8017SA 1.8-volt 2-channel step-up DC-DC converter control IC • Overview Unit: mm 5.0±0.2 16 9 +0.10 0.15 −0.05 4.4±0.2 6.4±0.3 1.0 0° to 10° 0.5±0.2 1 8 1.2±0.2 The AN8017SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation.

AN8016NSH

Abstract: AN8017SA AN8018SA
Contextual Info: Voltage Regulators AN8017SA 1.8-volt 2-channel step-up DC-DC converter control IC • Overview Unit: mm M Di ain sc te on na tin nc ue e/ d The AN8017SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up voltage with a small

GRM40F103Z50

Abstract: GRM40F104Z50 MCR10F FT1D-2M GRM40CH221J50 MCR10J GRM40F333Z
Contextual Info: 部 品 表 三菱電機セミコンダクタシステム株式会社 部品名 項番 品名 部品仕様 部品番号 部品型名 1 台分 メーカ名 実装指示 個数 支給区分 1 M32R/E #4 U1 M32170 F 6 V F P 三菱 直付け 1 MESC 2 リ セ ッ ト IC