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    MA3Z080E Search Results

    MA3Z080E Datasheets (2)

    Panasonic
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MA3Z080E
    Panasonic Silicon epitaxial planar type Original PDF 44.06KB 2
    MA3Z080E
    Panasonic Diode Original PDF 54.69KB 3

    MA3Z080E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ M Di ain sc te on na tin nc ue e/ d • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD


    Original
    ma3z080dma3z080ema80wama80wk PDF

    MA3Z080D

    Abstract: MA3Z080E M1X marking
    Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD


    Original
    ma3z080dma3z080em1x marking PDF

    MA3Z080D

    Abstract: MA3Z080E MA80WA MA80WK M1Y diode
    Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD


    Original
    ma3z080dma3z080ema80wama80wk+1m1y diode PDF

    MA3Z080D

    Abstract: MA3Z080E MA80WA MA80WK
    Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 1.25±0.10 • Features 2 0.2±0.1 1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original
    ma3z080dma3z080ema80wama80wk PDF

    MA3Z080D

    Abstract: MA3Z080E MA80WA MA80WK
    Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD


    Original
    ma3z080dma3z080ema80wama80wk PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928 PDF