MA151K
Abstract: MA151WA 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li
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ma1u152kma1u152wkma1u157ama2s111+9ma4s159ma147ma151ama151kma151waha151vk610c610ds10a
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610C
Abstract: 610D S10A MA151WA
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # ffl tt m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li
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ma1u152kma1u152wkma1u157ama2s111+7ma4s159i15-025min610c610ds10ama151wa
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tb 495d
Abstract: 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li
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ma1u152kma1u152wkma1u157ama2s111+10ma4s159ma147ma151ama151kma151waha151vktb 495d610c610ds10a
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Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ M Di ain sc te on na tin nc ue e/ d • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD
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ma3z080dma3z080ema80wama80wk |
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MA3Z080D
Abstract: MA3Z080E MA80WA MA80WK M1Y diode
Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD
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ma3z080dma3z080ema80wama80wk+1m1y diode
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610c st
Abstract: 610C 610D S10A MA141K MA151K
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li
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ma1u152kma1u152wkma1u157ama2s111+11ma4s15926min26m1n28min29min610c st610c610ds10ama141kma151k
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MA141WA
Abstract: TL 494 CN 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’ 152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q MAI 11 MA112 MAI 13 M A 115 MAI 16 MA132A MA 1 3 Z K MA132WA MA132WK MAI 3 3 MA141A MA141K MAI 41WA MA141WK MA142A MA142K MA142WA MA142WK
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ma1u152kma1u152wkma1u157ama2s111+10ma4s159ma152kma152wama152ik-43max-ima141watl 494 cn610c610ds10a
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MA3Z080D
Abstract: MA3Z080E MA80WA MA80WK
Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 1.25±0.10 • Features 2 0.2±0.1 1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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ma3z080dma3z080ema80wama80wk |
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Contextual Info: MA111 Band Switching Diodes MA80WA, MA80WK Silicon epitaxial planer type Unit : mm For band switching 2.1±0.1 voltage dependence of diode capacity CD ● S-Mini package, with two elements incorporated enabling down-siz- ing of the equipment and automatic insertion through taping
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ma111ma80wama80wksc-70+1100mhz
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MA141WA
Abstract: 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’ 152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q MAI 11 MA112 MAI 13 M A 115 MAI 16 MA132A MA13ZK MA132WA MA132WK MAI 3 3 « Vrrm töT fö"F » T tt s m ffl * Ct pF 0. 6 2 15 2 2 1.2
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ma1u152kma1u152wkma1u157ama2s111+10ma4s159ma147ma151ama151kma151waha151vkma141wa610c610ds10a
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sis 756
Abstract: UAA 1002 610C 610D S10A MAI11 SC8A SC70 S10A MA151A
Contextual Info: — ft m £ X * ft # tt s m ft # & « Vrrm M A 1U 1 52K M .4il’152WA M A1U152W K tö T fö "F M A 1U 1 57A M A2S111 » T M A 4S159 M A57 M A72 M A73 MA75WA MA75WK M A77 MA8QWA MA80WK MA11Q M A I 11 M A 112 M A I 13 M A115 M A I 16 M A 132 A M A1 3ZK MA132W A
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ma1u152kma1u152wkma1u157ama2s111+14ma4s15981min26maxfij4435minsis 756uaa 1002610c610ds10amai11sc8asc70 s10ama151a
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MA3Z080D
Abstract: MA3Z080E MA80WA MA80WK
Contextual Info: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD
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ma3z080dma3z080ema80wama80wk |
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495d
Abstract: sis 756 MA151WA MA141WA MA151A 610C 610D S10A
Contextual Info: — ft & « Vrrm M A 132 A MA 13 Z K MA132W A MA132WK MAI 33 M A141 A M A 141 K M A I 4 1 WA MA141WK M A142 A föT tö T T ° C ( l i A) V r (V ) T ( ° C ) 0. 6 2 15 2 2 1 .2 3 10 3 3 3 1. 2 3 225 100 100* 100* 100 100* 0. 5 1. 2 1 1 1 1 100 100 100 100
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ma1u152kma1u152wkma1u157ama2s111+14ma4s159ma152ama152kma152wama152ikei494495dsis 756ma151wama141wama151a610c610ds10a
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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