MA6X718
Abstract: MA718
Contextual Info: Schottky Barrier Diodes SBD MA6X718 (MA718) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 + 0.25 3 + 0.1 1.45 ± 0.1 4 + 0.1 0.16 − 0.06 2 0.8 + 0.2 1.9 ± 0.1 0.95 0.95 2.9 − 0.05 + 0.2 1.1 − 0.1 • Three MA3X704As in the same direction are contained in one
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MA6X718
Contextual Info: Schottky Barrier Diodes SBD MA6X718 Silicon epitaxial planar type Unit : mm + 0.25 4 3 0 to 0.05 0.1 to 0.3 0.4 ± 0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 30 V current* Peak forward IFM 150 mA Forward current (DC)*
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MA716
Abstract: MA3X716 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Unit : mm + 0.2 Silicon epitaxial planar type 2.8 − 0.3 0.65 ± 0.15 1.45 0.95 1.5 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 For switching circuits For wave detection circuit 1.9 ± 0.2 0.65 ± 0.15 + 0.25
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M2P diode
Abstract: marking m2p M2R DIODE MINI 3PIN MA3X704D MA3X704E
Contextual Info: Schottky Barrier Diodes SBD MA3X704D, MA3X704E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V Peak forward current Single IFM 150 mA Forward current (DC) Single + 0.1 0.16 − 0.06
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MA4X713
Contextual Info: Schottky Barrier Diodes SBD MA4X713 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.1 1.5 0.4 − 0.05 1.45 0.65 ± 0.15 + 0.25 − 0.05 0.5 0.95 1 + 0.1 3 + 0.1 0.16 − 0.06 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 Symbol Reverse voltage (DC)
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MA3X716
Contextual Info: Schottky Barrier Diodes SBD MA3X716 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Peak forward current Single Forward current (DC) Single 1.45 0.95 3 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating VR 30 V 150 mA Series 1 : Anode 1 2 : Cathode 2
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MA4X714
Abstract: MA714
Contextual Info: Schottky Barrier Diodes SBD MA4X714 (MA714) Silicon epitaxial planar type + 0.25 Peak forward current Single Forward current (DC) Single Rating Unit VR 30 V IFM 150 mA Double* + 0.1 0.4 − 0.05 1.45 0.5 IF 30 + 0.1 0.16 − 0.06 0.6 − 0 0.2 0.8 + 0.2
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MA4X714
Abstract: marking M1P
Contextual Info: Schottky Barrier Diodes SBD MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 Reverse voltage (DC) Peak forward current
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MA3X704D
Abstract: MA3X704E MA704WA MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"
Contextual Info: Schottky Barrier Diodes SBD MA3X704D , MA3X704E (MA704WA,MA704WK) Silicon epitaxial planar type + 0.25 Parameter Symbol Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V IFM 150 mA Forward current (DC) Single 30 Junction temperature Tj 125 °C Storage temperature
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ma3x704dma3x704ema704wama704wk+6ma3x704d/eo-236sc-59panasonic ma diodes sc-59 markingmarking m2ppanasonic "rs 466
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MA4X713
Abstract: MA713
Contextual Info: Schottky Barrier Diodes SBD MA4X713 (MA713) Unit : mm Silicon epitaxial planar type + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 Symbol Peak forward current Single Forward current (DC) Single Rating VR 30 V 150 mA Double* + 0.1 + 0.1 0.16 − 0.06 0.6 − 0
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