M2801 Search Results

Contextual Info: w # S G S -T H O M S O N M28010 V # « RitlD M li[Lli©inS lii!lD©i 1 Mbit 128Kb x 8) Parallel EEPROM with Software Data Protection PRODUCT PREVIEW FAST ACCESS TIME: 100ns 2.7V to 3.6V SINGLE SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST W RITE CYCLE: - 128 Bytes Page Write Operation

M28010

Abstract: M28010-R M28010-W PDIP32 PLCC32 TSOP32 STMicroelectronics date code format PLCC
Contextual Info: M28010 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN • Fast Access Time: 100 ns ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28010 – 2.7 V to 3.6 V for M28010-W – 1.8 V to 2.4 V for M28010-R ■ Low Power Consumption

M28010

Abstract: M28010-R M28010-W PDIP32 PLCC32 TSOP32
Contextual Info: M28010 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection DATA BRIEFING • Fast Access Time: 100 ns ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28010 – 2.7 V to 3.6 V for M28010-W – 1.8 V to 2.4 V for M28010-R ■ Low Power Consumption

M28010

Abstract: M28010-R M28010-W PDIP32 PLCC32 TSOP32
Contextual Info: M28010 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 100 ns ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28010 – 2.7 V to 3.6 V for M28010-W – 1.8 V to 2.4 V for M28010-R ■ Low Power Consumption

M28010

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28010 1Mbit 128Kb x8 Parallel EEPROM with Software Data Protection DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SINGLE SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 128 Bytes Page Write Operation – Byte or Page Write Cycle ENHANCED END of WRITE DETECTION:

M28010

Abstract: M28010-R M28010-W PDIP32 PLCC32 TSOP32
Contextual Info: M28010 1 Mbit 128K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 100 ns ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28010 – 2.7 V to 3.6 V for M28010-W – 1.8 V to 2.4 V for M28010-R ■ Low Power Consumption

Contextual Info: Ordering Guide www.vishay.com Vishay Dale Oscillators Part Markings PART MARKINGS M 2 8 3 PRODUCT SERIES M2803 = XO-53 catalog series M2802 = XO-52 catalog series M2801 = XO-523 catalog series M2803 = XO-54 catalog series M2806 = XO-543 catalog series M2804 =

M28010

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M28010 1Mbit 128Kb x 8 Parallel EEPROM with Software Data Protection PRODUCT PREVIEW FAST ACCESS TIME: 100ns 2.7V to 3.6V SINGLE SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 128 Bytes Page Write Operation – Byte or Page Write Cycle ENHANCED END of WRITE DETECTION:

PDIP28

Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page

m21 94v-0

Contextual Info: D-Subminiature Solder Cup M21 Series PART NUMBER LEGEND M21X - XXX - 0XX - XX SPECIFICATIONS: Material: Shell: Steel, tin-plated Insulator: Polybutylene Terephthalate PBT , glass reinforced thermoplastic, rated UL 94V-0 Insulator color: Black Optional insulator colors: White, Blue

Frequency Control Products

Abstract: CB2V
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-1012 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

plcc32

Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page

Contextual Info: D-Subminiature EMI RFI Filter Option Methode EMI Filter Option Incorporates an integral high performance ferrite element with superior frequency characteristics to our standard line of D - Subs. The ferrite plate is fitted over the connectors contacts and when installed on

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in