M1208 Search Results

m1208

Abstract: aval PKW 1000 allpro 88 bytek TSOP 48 socket TSOP 40 socket unisite BP-1200 F1208 Quasar
Contextual Info: M1208 Specification Number: _ PROGRAMMING ADAPTER SPECIFICATION Item: Description: 404001TS600YAMR AS-40-40-01TS-6YAM-GANG-R REPLACEMENT SOCKET: S-TSO-00-040-A Call Emulation Technology for a replacement socket price and delivery quote. TYPICAL DIMENSIONS:

MC-42S4LFG64SA-A50

Abstract: MC-42S4LFG64SA-A60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S4LFG64S 3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S4LFG64S is a 4,194,304 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64M DRAM : µPD42S65165 are assembled.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-42S4LFG64S 3.3 V OPERATION 4M-W ORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S4LFG64S is a 4,194,304 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 4

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516CC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M SDRAM : ¿/PD4564841 are assembled.

SAV-581

Abstract: PL300 MMM1362 840nH MARKING 04 MINI-CIRCUITS ENV08T2
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +30 dBm • Output Power at 1dB comp., +20 dBm • Medium Current, 30mA • Wide bandwidth • External biasing and matching required

MIC710

Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
Contextual Info: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes

ZFSC-16-3

Abstract: ZFSC-16-3-S M120885
Contextual Info: Coaxial ZFSC-16-3+ ZFSC-16-3 Power Splitter/Combiner 16 Way-0° 50Ω 1 to 30 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter • high isolation, 45 dB typ. • rugged shielded case

t10812

Abstract: Jensen B 17038 70-12911-04 Jensen* B 17038 B1182 70-12911-2 an 17830 A 009-036-9-001 sangamo capacitor rotary potentiometer dual 60k
Contextual Info: MALLORY - DURACAP INTERNATIONAL INC. P.O. Box 210, 59 Montclair Drive Woodstock, Ontario, Canada N4S 7W8 Telephone: 519 539-4891 Sales@duracap.com Fax:(519)539-6684 Cage Code 63778 E.I.A. Code 235 Web: www.duracap.com MALLORY CONTROLS - WIREWOUND AND SWITCH PRODUCTS

M120805

Contextual Info: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • Pure tin on nickel barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances

TNPW e3

Contextual Info: M10, M11, M12, M25 Not for New Designs, alternatively please use TNPW e3 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat RoHS • Pure tin on nickel barrier layer COMPLIANT

Contextual Info: DATA SHEET 09:20 MOS INTEGRATED CIRCUIT MC-428LAF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, FAST PAGE MODE Description The MC-428LAF72 is a 8,388,608 words by 72 bits dynamic RAM module on which 9 pieces of 64 M DRAM: µPD4264800 are assembled.

M2512

Abstract: TNPW e3 1K 1608 m1 marking code M100402 M11 marking 562R M1106 draloric RESISTOR 206
Contextual Info: M10, M11, M12, M25 Not for New Designs, alternatively please use TNPW e3 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat RoHS • Pure tin on nickel barrier layer COMPLIANT

M11 marking

Abstract: vishay resistor 220k 562R M100402 VISHAY marking m11 M110603 marking m25 M1106 M-1106 M1140
Contextual Info: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • Pure tin on nickel barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances

d17a0

Abstract: MC-4516CC724F-A10
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CC724 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M SDRAM : µPD4564841 are assembled.

SC 14430

Abstract: MMM1362 transistor 9015 sc 2304 sot 353 TB-471
Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Output Power at 1dB comp., +18 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL SAV541 avago marking -2
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

VISHAY marking m11

Abstract: 5r1 resistor
Contextual Info: M10, M11, M12, M25 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat • Pure tin on nickel barrier layer • Excellent stability at different environmental conditions • Low TC and tight tolerances

MC-4516CC724F-A10

Abstract: M1208
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-42S8LFF64S 3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM , EDO Description The MC-42S8LFF64S is a 8,388,608 words by 64 bits dynamic RAM module (Small Outline DIMM) on which 8

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-42S8LFF64S 8 M-WORD BY 64-BIT DYNAMIC RAM MODULE SO DIMM EDO Description The MC-42S8LFF64S is a 8,388,608 words by 64 bits dynamic RAM modules (Small Outline DIMM) on which 8 pieces of 64 M DRAM : µPD42S65805 are assembled.

Contextual Info: PRELIMINARY DATA SHEET 19:48 MOS INTEGRATED CIRCUIT MC-4216LAF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, FAST PAGE MODE Description The MC-4216LAF72 is a 16,777,216 words b y 72 bit s dynamic RA M module on which 18 pieces of 64 M DRAM:

Contextual Info: Coaxial ZFSC-16-3+ ZFSC-16-3 Power Splitter/Combiner 16 Way-0° 50Ω 1 to 30 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter • high isolation, 45 dB typ. • rugged shielded case

TNPW e3

Contextual Info: M10, M11, M12, M25 Not for New Designs, alternatively please use TNPW e3 Vishay Draloric Thin Film, Rectangular, Resistor Chips FEATURES • Metal film layer on high quality ceramic • Protective top coat RoHS • Pure tin on nickel barrier layer COMPLIANT