LT2N7002 Search Results

Marking Code k72

Abstract: k72 diode K72 marking diode K72 MARKING SOT-23
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

s72 sot 23

Abstract: S72 marking marking code S72 SOT23 sot-23 marking S72 s72 sot23 mosfet s72 s72 mosfet transistor marking s72 LT2N7002 Marking Code S72
Contextual Info: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely

Contextual Info: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely

LT2N7002

Abstract: marking 702 sot23 code 702 marking code 702 SOT23
Contextual Info: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely

mosfet k72

Abstract: Marking Code k72 k72 diode LT2N7002E k72 sot 23 code k72 N-channel Power MOSFET
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

LT2N7002

Abstract: power mosfet sot-23 marking 702 sot23
Contextual Info: LT2N7002 N-Channel 60V Power MOSFET GENERAL DESCRIPTION FEATURES The LT2N7002 is the N-Channel enhancement mode field effect ● 60V / 0.50A , RDS ON = 5.0Ω@VGS=10V ● 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V ● Super high density cell design for extremely

Marking Code k72

Abstract: code k72 k72 diode K72 marking diode LT2N7002D
Contextual Info: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

LT2N7002E

Abstract: code k72 k72 diode mosfet k72 LT2N7002
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

LSP5522L

Contextual Info: LITELITE-ON SEMICONDUCTOR CORP. ON LITE DISCRETE DIVISION TVS SMAJ7.0A/ 9A SMAJ12A/ 15A SMAJ24A Schottky ESD B340A/ B360B B160/ B240A B2100A 1N5819WL FB340LM Bridge HD06 Switching BAT54A/C/S,WS 1N4148W/ WS LS4148W/WS BAV99W 2010 L15ESDL5V0NA-4 HDMI L30ESDL5V0C6-4 USB2.0