LH28F004 Search Results

Contextual Info: LH28F004SC-L/SCH-L SHARP LH28F004SC-L/SCH-L CONTENTS FEATURES. 75 COMPARISON TAB LE.75 PIN CONNECTIONS. 76

LC124

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ

Contextual Info: LH28F004SU-Z9 FEATURES 4M 512 x 8 Flash Memory 42-PIN CSP TOP VIEW • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V Vpp, 3.0 V ± 0.3 V V CC, CC’ +15°C to +35°C) - No Requirement For DC/DC Converter To Write/Erase / 1 2 3

Contextual Info: FLASH MEMORY LH28F004SUT-NC80 / SHARP CORPORATION LHF04S62 • H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

Contextual Info: LH28F004SC-L/SCH-L LH28F004SC-L/SCH-L 4 M-bit 512 kB x 8 SmartVoltage Flash Memories DESCRIPTION The LH28F004SC-L/SCH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. Their symmetrically-blocked

NC80

Abstract: LH28F004SU-NC LH28F008SA 0C000
Contextual Info: LH28F004SU-NC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 80 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

LH28F004SCT

Contextual Info: PRODUCT INFORMATION LH28F004SCT 4M 512K x 8 SmartVoltage Flash Memory FEATURES • SmartVoltage technology – 2.7 V (Read-Only), 3.3 V or 5 V VCC – 3.3 V, 5 V or 12 V VPP • High-performance – 85 ns read access time • Enhanced automated suspend options

Contextual Info: Date 4M x8 Flash Memory LH28F004BVT-TL85 Jan. 25. 1999 LHF04VZ1 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F004SC 4M 512Kx8 SmartVoltage

LH28F004SU-LC

Abstract: LH28F008SA 40TSOP
Contextual Info: LH28F004SU-LC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP, 3.3 V VCC – No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability – 160 ns Maximum Access Time

Contextual Info: LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F004SCH-L 4M 512Kx8 Smart Voltage

CSR application

Abstract: CSR-4 Transistor z1 LH28F004SU-Z1 LH28F008SA CSR34
Contextual Info: LH28F004SU-Z1 FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 100 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

Contextual Info: MEMORIES Flash Memories_I ★ Under development C apacity C onfiguration Model No. Supply voltage A c c e s s tim e n s (Vcc/Vpp) 5V Single 2M 60 70 BO 85 100 1 2 0 150 -0 ★LH28F020SU-N x8 3.3/5V ★LH28F020SU-L LH28F004SU-N ★

Contextual Info: 4 Mb, SmartVoltage, Cobra, I-Temp, TSOP, LH28F004SCHTL85

LH28F004SCB-L12

Contextual Info: LH28F004SCB-L12 4M, Smart Voltage, FLASH, FLASH FILE, NON-VOLATILE, ETOX,

42-PIN

Abstract: LH28F004SU LH28F004SU-Z9
Contextual Info: LH28F004SU-Z9 FEATURES • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation 5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C – No Requirement For DC/DC Converter To Write/Erase • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) 4M (512 × 8) Flash Memory

DESIGNING WITH SHARP FLASH MEMORY

Contextual Info: LH28F004SU-Z1 FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase TOP VIEW S’ A -I6 IZ -1• 2 j I / / "N 40 □ A i 7 / 39 □ g n d

LH28F004BVT-BL85

Abstract: t235vph
Contextual Info: Date 4M x8 Flash Memory LH28F004BVT-BL85 Jul. 31. 1998 LHF04VZ2 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written

Contextual Info: V e r . 1.0 SHARP Limited useage of LH28F004SU/ LH28F400SU In the case of 8bit configuration Programmingproblem at command and data We observed som e operation error w hen you write commandand data in following timing. • Same timming of CES High and WE s High

4S29

Contextual Info: SHARP ìL _ u !y /n v A H Y July 1996 - FLASH MEMORY LH28F004SUB- Z9 \ SHARP CORPORATION LHF04SZ9

Contextual Info: SHARP REFERENCE SPEC No. E L 0 9 7 1 3 3 I S S U E : Jul 17 1997 To ; S P E C I F I C A T I O N S Product Type Flash File M e m o r y _ LH28F004 SCT-L8 5 Mo de l No. CL HF 0 4 C 0 1 ^T his sp ecification s contains 46 pages including the cover and appendix.

NC80

Contextual Info: LH28F004SU-NC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP TOP VIEW • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase 1» 40 39 □ gnd 38 NC 37 NC 34 ZI DQ6 • 80 ns Maximum Access Time

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp; 3.3 V V qq) - No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability

phase controller L120

Abstract: 1N914 28F008SA LH28F004SCB-L12 LHF04C10
Contextual Info: SHARP LHF04C10 CONTENTS PA G E PA G E 1.0 IN TRO D U CTIO N . 3 5.0 D ESIG N C O N S ID E R A T IO N S . 23 1.1 New Features. 3