LET20030C Search Results
LET20030C Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LET20030C |
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RF Power Transistor | Original | 37.26KB | 5 | ||
| LET20030C |
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RF FETs, Discrete Semiconductor Products, MOSF RF PWR N CH 80V LDMOST M243 | Original | 9 |
LET20030C Price and Stock
STMicroelectronics LET20030CTrans RF MOSFET N-CH 80V 9A 3-Pin Case M-243 Loose |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LET20030C | 42 | 1 |
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LET20030C | Box | 50 |
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LET20030C | 42 | 99 Weeks | 1 |
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LET20030C | 43 | 1 |
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LET20030C | 34 |
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| LET20030C | 34 |
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LET20030C | 10,525 |
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LET20030C Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: LET20030C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 13.9 dB gain @ 2000 MHz ■ POUT (@36 V) = 53 W with 13.3 dB gain @ |
Original |
let20030c2002/95/ec | |
LET20030C
Abstract: M243
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Original |
let20030cis-97m243 | |
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Contextual Info: LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION M243 epoxy sealed • POUT = 30 W with 11 dB gain @ 2000 MHz |
Original |
let20030cis-97 |