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    LET20030C Search Results

    LET20030C Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    LET20030C
    		STMicroelectronics RF Power Transistor Original PDF 37.26KB 5
    LET20030C
    		STMicroelectronics RF FETs, Discrete Semiconductor Products, MOSF RF PWR N CH 80V LDMOST M243 Original PDF 9
    SF Impression Pixel

    LET20030C Price and Stock

    STMicroelectronics

    STMicroelectronics LET20030C

    RF MOSFET LDMOS 28V M243
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LET20030C Box 1
    • 1 $81.85
    • 10 $81.85
    • 100 $65.00
    • 1000 $65.00
    • 10000 $65.00
    		Buy Now
    Verical LET20030C 42 1
    • 1 $59.77
    • 10 $59.77
    • 100 $59.77
    • 1000 $59.77
    • 10000 $59.77
    		Buy Now
    Arrow Electronics LET20030C 42 99 Weeks 1
    • 1 $59.77
    • 10 $59.77
    • 100 $59.77
    • 1000 $59.77
    • 10000 $59.77
    		Buy Now
    Bristol Electronics LET20030C 43 1
    • 1 $66.00
    • 10 $63.46
    • 100 $55.85
    • 1000 $55.85
    • 10000 $55.85
    		Buy Now
    Quest Components () LET20030C 34
    • 1 $71.50
    • 10 $71.50
    • 100 $63.25
    • 1000 $63.25
    • 10000 $63.25
    		Buy Now
    LET20030C 34
    • 1 $118.91
    • 10 $101.07
    • 100 $95.12
    • 1000 $95.12
    • 10000 $95.12
    		Buy Now

    LET20030C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LET20030C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT @28 V = 45 W with 13.9 dB gain @ 2000 MHz ■ POUT (@36 V) = 53 W with 13.3 dB gain @


    Original     		LET20030C 2002/95/EC LET20030C PDF

    LET20030C

    Abstract: M243
    Contextual Info: LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION M243 epoxy sealed • POUT = 30 W with 11 dB gain @ 2000 MHz


    Original     		LET20030C IS-97 LET20030C M243 PDF

    Contextual Info: LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION M243 epoxy sealed • POUT = 30 W with 11 dB gain @ 2000 MHz


    Original     		LET20030C IS-97 LET20030C PDF