LED19 Search Results
LED19 Price and Stock
Fix&Fasten FIX-LED-19Spacer sleeve; LEDs,LED; Øout: 5mm; ØLED: 5mm; L: 19mm; natural |
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FIX-LED-19 | 9,107 | 50 |
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Fix&Fasten FIX-LED-19.5Spacer sleeve; LEDs,LED; Øout: 5mm; ØLED: 5mm; L: 19.5mm; natural |
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FIX-LED-19.5 | 1,850 | 50 |
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Wakefield-Vette DUALLED-19037Heatsink; LED; L: 190mm; W: 190mm; H: 37mm; black; Shape: round |
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DUALLED-19037 | 1 |
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DUALLED-19037 |
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Advantech Co Ltd 96-LED-19-VS-BVIEWSONIC 19" 5:4 LED BLK - Bulk (Alt: 96-LED-19-VS-B) |
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96-LED-19-VS-B | Bulk | 1 |
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Moflash Signaling Ltd LED195-02WH-SB-01Beacon, Continuous/Flashing, 30V, Amber; |Moflash Signalling LED195-02WH-SB-01 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LED195-02WH-SB-01 | Bulk | 2 | 1 |
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LED19 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LED19-PRContextual Info: LED19-PR v 2.0 24.11.2014 Description LED19-PR series are fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate. This Mid-IR LED provides a typical peak wavelength of 1.95 µm and optical power of typ. 1 mW qCW. It comes in TO-18 package, with a parabolic reflector and a without window on request . |
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led19-pr150ma200ma | |
LED19FC-TECContextual Info: LED19FC-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led19fc-tec670x770150-200ma | |
LED19FC-PRContextual Info: LED19FC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led19fc-pr670x770150-200ma | |
LED19FC-PR-WINContextual Info: LED19FC-PR-WIN TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led19fc-pr-win670x770150-200ma | |
LED19-TECContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.95 µm Model LED19-TEC 1.0 mW •Light Emitting Diodes LED19-TEC are designed for emitting at a spectral range around 1950 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates |
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led19-tecled19led19-pr | |
LED19-SMD5Contextual Info: LED19-SMD5 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. |
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led19-smd5300x300150-200ma | |
LED19FC-TEC-PRContextual Info: LED19FC-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led19fc-tec-pr670x770150-200ma | |
smd diode UM-12Contextual Info: LED19-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. |
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led19-smd3300x300150-200masmd diode um-12 | |
LED19FC-SMD5Contextual Info: LED19FC-SMD5 TECHNICAL DATA Mid-Infrared LED, Flip-Chip Design, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid |
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led19fc-smd5670x770150-200ma | |
LED19FCContextual Info: LED19FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap |
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led19fc670x770150-200ma | |
LED19-SMD5RContextual Info: LED19-SMD5R TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. |
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led19-smd5r300x300150-200ma | |
LED19Contextual Info: LED19 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions GaInAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. |
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led19 | |
LED19-TEC-PRContextual Info: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 1.95 µm Model LED19-TEC-PR 1.0 mW •Light Emitting Diodes LED19-TEC-PR are designed for emitting at a spectral range around 1950 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates |
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led19-tec-prled19led19-pr | |
LED38Contextual Info: LED38 v 2.0 01.12.2014 Description LED19-PR series are fabricated from narrow band-gap InAsSb/InAsSbP heterostructures lattice matched to InAs substrate. This Mid-IR LED provides a typical peak wavelength of 3.75 µm and optical power of typ. 30 µW qCW. It comes in TO-18 package, with cap and without window on request . |
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led38led19-pr | |
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LED25
Abstract: LED10 QFN-24 QFN-24 lcd SCHOTTKY DIODE 20V 2A LED28 DIM100
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fp6741a10-channel640khzmo-153-f+10 | |
ISL97670
Abstract: LED9r2 jp1e 6P10S JP16 6P12S ISL97673 ISL97671 ISL97672 ISL97674
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isl97671/2/3/4irz-eval6p12sisl97670isl97671/3/4+8 | |
BL8545
Abstract: SOT23-6 marking R12 converter circuit dc to Dc 2V to 24V LC3300 SOT-23-6 code r5 SS14 bl8545cb6tr SOT23-6 package
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bl8545lc3300sot23-6 marking r12converter circuit dc to dc 2v to 24v+4 | |
Product lineContextual Info: Mid-IR Products Product Line Overview Mid-Infrared Light Emitting Diodes and Photodiodes We offer: • • • • • Standard LEDs Flip-Chip bounded LEDs Multi Chip LEDs PDs LED drivers and PD amplifiers Standard LEDs LED chips with circular or ring top contact |
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led18led19led20led21+7 | |
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Contextual Info: PCA9626 24-bit Fm+ I2C-bus 100 mA 40 V LED driver Rev. 4 — 14 May 2014 Product data sheet 1. General description The PCA9626 is an I2C-bus controlled 24-bit LED driver optimized for voltage switch dimming and blinking 100 mA Red/Green/Blue/Amber RGBA LEDs. Each LED output |
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pca962624-bit | |
dream france SAM2553
Abstract: SAM2553 ATSAM2553PIADK ATSAM2553PIA-DK ATSAM2553 AT45DB011D-SU 49BV642DT ISP1181BDGG .118 Philips mk5 c4234
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atsam2553pia-dkatsam2553cs4270103db+12 | |
MEC5025
Abstract: MAX8786 MEC5004 ECE5018 MAX8778 atx power supply dell schematic SMSC ECE5021-NU ECE5011 31FM5MB0011 MEC5004 quanta
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ck505mpciex16ece5021blm18sg260+10 | |
IDC18Contextual Info: PCA9626 24-bit Fm+ I2C-bus 100 mA 40 V LED driver Rev. 3 — 6 September 2012 Product data sheet 1. General description The PCA9626 is an I2C-bus controlled 24-bit LED driver optimized for voltage switch dimming and blinking 100 mA Red/Green/Blue/Amber RGBA LEDs. Each LED output |
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pca962624-bitidc18 | |
IDC18
Abstract: PCU9656 ldr5
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pcu965624-bitidc18ldr5 | |
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Contextual Info: ISL97636 Data Sheet May 9, 2008 8-Channel LED Driver Features The ISL97636 is an integrated power LED driver that controls 8 channels of LED current for LCD backlight applications. The ISL97636 is capable of driving typically 72 8x9 pieces of 3.5V/30mA or 80 (8x10) pieces of |
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isl97636v/30mav/20ma5m-1994+1 | |