KTB595
Abstract: KTD525
Contextual Info: SEMICONDUCTOR KTB595 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=-100V. F ᴌLow Collector-Emitter Saturation Voltage. P Q D B : VCE sat =-2.0V(Max.) ᴌComplementary to KTD525.
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KTB595
Abstract: KTD525
Contextual Info: SEMICONDUCTOR KTD525 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector-Emitter Saturation Voltage. F : VCE sat =2.0V(Max.) P Q D B ᴌComplementary to KTB595. MAXIMUM RATING (Ta=25ᴱ) RATING UNIT
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ktd525ktb595 |
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KTD525
Abstract: KTB595
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL D A T A KTD525 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage :VcE sat =2.0V(Max.). • Complementary to KTB595. MILLIMETERS MAXIMUM RATINGS (Ta=25°C)
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KTB595
Abstract: KTD525
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD525 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES P • Low Collector Saturation Voltage :VcE<sat =2.0V Max.). • Complementary to KTB595. K I h DIM MILLIMETERS 10.30 MAX 15.30 MAX 0.80 03.60+0.20 MAXIMUM RATINGS (Ta=25°C)
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KTB595
Abstract: KTD525
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB595 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V ceo=_100V. • Low Collector-Emitter Saturation Voltage. : VCE sat =_2.0V(Max.) • Complementary to KTD525.
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ktb595ktd525220ab |
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KTD525
Abstract: KTB595
Contextual Info: SEMICONDUCTOR KTB595 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌHigh Breakdown Voltage : VCEO=-100V. F ᴌLow Collector-Emitter Saturation Voltage. P Q D B : VCE sat =-2.0V(Max.) ᴌComplementary to KTD525.
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ktb595-100vktd525100ms |
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KTB595
Abstract: KTD525
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTB595 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : V ceo=_100V. • Low Collector-Emitter Saturation Voltage. : VcE sat -_2.0V(Max.) • Complementary to KTD525. DIM M ILLIMETERS
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ktb595ktd525 |
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2SC3875S
Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
Contextual Info: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200
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ta-252sc3875s2sa1s04sot-23+122sc32012sa1269o-92m2sc31992sa1267bc547 bc5462sc4370a2sc32272sa1274bc557 bc5562sa1659abc557
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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ssip-12kia6283kkia7217apssip-10+13kia6240kkia6801kkia6901p/fmb4213f10p048mn1280mb4213 equivalentsmd transistor zaadiode zener zd 15ic mb4213transistor 2ax smd252 b34 smd zener diodebc237 equivalent smd
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2SC4370A
Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
Contextual Info: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)
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2sc387ss2sa1s04sot-232sc3201+142sa1269o-92m2sc31992sa12672sc3198a2sc4370a2sc3875s2sa1504s2sc3227bc548 ,bc558bc5572sa1504bc337/bc3272sc3202
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2n44012n54012n55512sa1004+162sa10102sa10132sa10152sa10162sa10172sa10192sc3133 cross referencehitachi 2sc281nec d882a564ad1163a2sc1815 cross referencea628akrc1211kra2203nec d288
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