KMB050N Search Results

kmb*050n60p

Abstract: KMB050N60P KMB050N60
Contextual Info: SEMICONDUCTOR KMB050N60P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

kmb 050n60p

Contextual Info: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

kmb 050n60p

Contextual Info: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

KMB050N60P

Abstract: kmb*050n60p KMB050N60 KMB050N DSA0010470
Contextual Info: SEMICONDUCTOR KMB050N60P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking. 2. Marking KMB050N 60P 1 511 No. 2005. 11. 14 2 Item Marking Description Device Name KMB050N60P KMB050N60P Lot No. 511 Revision No : 0 5 Year 0~9 : 2000~2009 11

050n60p

Abstract: kmb*050n60p
Contextual Info: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

kmb*050n60p

Contextual Info: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

Contextual Info: SEMICONDUCTOR KMB050N60P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

kmb 050n60p

Abstract: 050n60p 050n60 kmb*050n60p KMB050N60PA KMB050N60P KMB050N60 KMB 050N60
Contextual Info: SEMICONDUCTOR KMB050N60PA TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications O C F E DIM MILLIMETERS

kmb*050n60p

Abstract: KMB050N60 KMB050N60P KMB050N60PA a726 KMB050N
Contextual Info: SEMICONDUCTOR KMB050N60PA MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking. 2. Marking 1 KMB050N60P A 726 No. 2007. 8. 24 2 Item Marking Description Device Name KMB050N60PA KMB050N60PA Lot No. 726 Revision No : 0 7 Year 0~9 : 2000~2009

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor