KM6164002BI Search Results
KM6164002BI Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KM6164002BIJ-10 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 218.19KB | 9 | ||
| KM6164002BIJ-12 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 218.19KB | 9 | ||
| KM6164002BIJ-15 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 218.19KB | 9 | ||
| KM6164002BIT-10 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 218.19KB | 9 | ||
| KM6164002BIT-12 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 218.19KB | 9 | ||
| KM6164002BIT-15 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 218.19KB | 9 |
KM6164002BI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KM616400Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY PRELIMINARY CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data |
Original |
km6164002bkm6164002bi256kx1644-tsop2-400f+1 | |
512X16
Abstract: KM6164002B 512X16 sram
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OCR Scan |
km6164002bkm6164002bi256kxi/o16+5 | |
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Contextual Info: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random |
OCR Scan |
km6164002bkm6164002bi304-bit71b4142+3 | |
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Contextual Info: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 |
OCR Scan |
km6164002bkm6164002bi256kx1644-tsop2-400f | |
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Contextual Info: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. |
OCR Scan |
km6164002bkm6164002bi256kx1644-soj-400+2 | |
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Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. |
Original |
km6164002bkm6164002bi256kx16250ma+3 | |
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Contextual Info: KM6164002B, KM6164002Bi CMOS SRAM 2S6KX16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002B-10 : 260mA(Max.) |
OCR Scan |
km6164002bkm6164002bi2s6kx16km6164002b-10+4 | |
SRAM sheet samsungContextual Info: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark |
OCR Scan |
km6164002bkm6164002bi256kx16sram sheet samsung | |
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Contextual Info: KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target |
OCR Scan |
km6164002bkm6164002bi256kx1644-tsop2-400f | |
KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
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256kb32kx8km62256ci-5/5lkm62256cle+16 |