CD 7805
Abstract: PH 4149
Contextual Info: O K I Semiconductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency G aA s pow er FET that features high gain at high currents to frequencies of over 2.4 GH z, with the ultra-low-impedance drive required for ISM, PH S and PCS appli
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kgf1606_kgf1606b72424d0d2efl74+42424dd022a7scd 7805ph 4149
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4562 fet
Abstract: ic 17806 KGF1606 marking 4489 f1606
Contextual Info: O K I Semiconductor KGF1606_ G aAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs power FET that features high gain at high currents to frequencies of over 2.4 GHz, with the ultra-low-impedance drive required for ISM, PHS and PCS appli
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kgf1606b72424db724z40q0z2fl75+44562 fetic 17806marking 4489f1606
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gaas fet marking AR
Abstract: 15862
Contextual Info: O K I Semiœnductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs pow er FET that features high gain at high currents to frequencies of over 2.4 GHz, w ith the ultra-low-impedance drive required for ISM, PH S and PCS appli
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kgf1606_kgf1606gaas fet marking ar15862 |
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