CD 7805
Abstract: PH 4149
Contextual Info: O K I Semiconductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency G aA s pow er FET that features high gain at high currents to frequencies of over 2.4 GH z, with the ultra-low-impedance drive required for ISM, PH S and PCS appli
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kgf1606_kgf1606b72424d0d2efl74+42424dd022a7scd 7805ph 4149
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4562 fet
Abstract: ic 17806 KGF1606 marking 4489 f1606
Contextual Info: O K I Semiconductor KGF1606_ G aAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs power FET that features high gain at high currents to frequencies of over 2.4 GHz, with the ultra-low-impedance drive required for ISM, PHS and PCS appli
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kgf1606b72424db724z40q0z2fl75+44562 fetic 17806marking 4489f1606
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gaas fet marking AR
Abstract: 15862
Contextual Info: O K I Semiœnductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs pow er FET that features high gain at high currents to frequencies of over 2.4 GHz, w ith the ultra-low-impedance drive required for ISM, PH S and PCS appli
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tag 9205
Abstract: 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML
Contextual Info: WHITE PAPER O K I T E L E C O M P R O D U C T S Technology Directions for Personal Communications Systems October 1995 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Introduction ■
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1-800-oki-6388tag 9205800mhz cdma handset circuit diagramwireless landline handset circuit diagram+7qualcomm 7200msm7* qualcommtag 9202800mhz cdma handset complete circuit diagramumbilical cordmci 9201ericsson bml
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38mm2
Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
Contextual Info: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.
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850mhzot-143kgf1155bkgf1156+11mbf9301849mhz38mm2fet 8pinnf 935fet dual gate sot143p01 sot-89gaas fet sot89kgf1145kgf2701kgf1165
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