K4H510838G Search Results

K4H511

Abstract: K4H510838G-LC K4H511638G
Contextual Info: K4H510438G K4H510838G K4H511638G DDR SDRAM 512Mb G-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K4H511638G

Abstract: K4H510438G K4H510838G-LC K4H510838G K4H511638G-LC/LCC
Contextual Info: K4H510438G K4H510838G K4H511638G DDR SDRAM 512Mb G-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

k4h511638g

Abstract: K4H510838G K4H510438G ddr400 DDR333 k4h511638g-hc
Contextual Info: K4H510438G K4H510838G K4H511638G DDR SDRAM 512Mb G-die DDR SDRAM Specification 60 FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: Product Specifications PART NO.: VL470L6523-B3SG REV: 1.0 General Information 512MB 64Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L6523 is a 64Mx64 Double Data Rate SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K

k4B2G1646

Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Contextual Info: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

Contextual Info: Product Specifications PART NO.: VL470L2925-R3SG REV: 1.0 General Information 1GB 128Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L2925 is a 128Mx64 Double Data Rate SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in BGA packages and a 2K EEPROM in an

VL470L2925-B3SG

Contextual Info: Product Specifications PART NO.: VL470L2925-B3SG REV: 1.0 General Information 1GB 128Mx64 DDR SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470L2925 is a 128Mx64 Double Data Rate SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 64Mx8 bits with 4 banks Synchronous DRAMs in BGA packages and a 2K EEPROM in an

K9F2G08U0C

Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM