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    IXTY4N60P Search Results

    IXTY4N60P Functional Equivalents (5)

    The Functional Equivalents tab will give you options that are likely to match the same function of IXTY4N60P, but it may not fit your design.

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    Part Number Manufacturer Composite Price Description
    IXFY4N60P3 IXYS Corporation $0.7601 Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    TK4P60DA Toshiba America Electronic Components $0.8891 Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IXTU4N60P IXYS Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
    IXTP4N60P IXYS Corporation Check for Price Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    TK4P55D Toshiba America Electronic Components Check for Price Power Field-Effect Transistor, 4A I(D), 550V, 1.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

    IXTY4N60P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTY4N60P
    IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TO-252 Original PDF 5
    SF Impression Pixel

    IXTY4N60P Price and Stock

    IXYS Corporation

    IXYS Corporation IXTY4N60P

    MOSFET N-CH 600V 4A TO252
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    IXTY4N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS


    Original
    IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P O-263 O-220 PDF

    IXTP4N60P

    Abstract: IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60
    Contextual Info: PolarHVTM Power MOSFET IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS on = 600 = 4 ≤ 2.0 V A Ω TO-263 (IXTA) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSS


    Original
    IXTA4N60P IXTP4N60P IXTU4N60P IXTY4N60P O-263 O-220 IXTP4N60P IXTA4N60P IXTU4N60P TO-251 weight IXTY4N60P IXTP4N60 PDF

    4N60P

    Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
    Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P PDF