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IXTY08N100P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTY08N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-252	Original	PDF		4

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Littelfuse Inc IXTY08N100P Disc Mosfet N-Ch Std-Polar To-252D/ Tube; \|Littelfuse IXTY08N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTY08N100P	Bulk			350	1 - 10 - 100 - 1000 $2.02 10000 $1.86	Buy Now
RS	IXTY08N100P	Bulk		8 Weeks	70	1 - 10 - 100 $3.02 1000 $3.02 10000 $3.02	Get Quote
Onlinecomponents.com	IXTY08N100P					1 - 10 - 100 $2.04 1000 $1.83 10000 $1.63	Buy Now
Littelfuse Inc IXTY08N100P-TRL Ixty08N100P Trl/ T&r; \|Littelfuse IXTY08N100P-TRL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTY08N100P-TRL	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.97	Buy Now
RS	IXTY08N100P-TRL	Bulk		8 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $3.02	Get Quote
Onlinecomponents.com	IXTY08N100P-TRL					1 - 10 - 100 - 1000 $4.30 10000 $1.57	Buy Now
IXYS Corporation IXTY08N100P Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTY08N100P				1	1 $4.06 10 $3.66 100 $2.24 1000 $2.01 10000 $2.01	Get Quote
IXYS Corporation IXTY08N100P-TRL Transistor: N-MOSFET; 1kV; 800mA; 42W; DPAK,TO252AA; 750ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTY08N100P-TRL				2,500	1 - 10 - 100 - 1000 - 10000 $1.90	Get Quote

IXTY08N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +108n100p	PDF
Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +208n100p 4-02-08-a	PDF
08N10 Abstract: IXTY08N100P ixtp08n100p Contextual Info: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +308n100p 4-02-08-a 08n10	PDF
IXTP08N100P Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N Contextual Info: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixta08n100p ixtp08n100p ixty08n100p o-263 +508n100p 4-02-08-a 08n100 ixtp08n100 t08n	PDF