IXTY08N100P Search Results

IXTY08N100P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTY08N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-252	Original	PDF		4

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IXYS Corporation IXTY08N100P MOSFETs 0.8 Amps 1000V 20 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTY08N100P		2,251			1 $2.11 10 $2.11 100 $2.11 1000 $2.11 10000 $2.11	Buy Now
IXYS Corporation IXTY08N100P-TRL MOSFET Modules IXTY08N100P TRL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTY08N100P-TRL					1 - 10 - 100 - 1000 - 10000 $2.10	Get Quote
Littelfuse Inc IXTY08N100P Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXTY08N100P		70		70	1 - 10 - 100 $2.18 1000 $2.14 10000 $2.14	Buy Now

IXTY08N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P	PDF
Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTA08N100P IXTP08N100P IXTY08N100P = 1000V = 0.8A Ω ≤ 20Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A	PDF
08N10 Abstract: IXTY08N100P ixtp08n100p Contextual Info: PolarTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 0.8A ≤ 20Ω Ω TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A 08N10 IXTY08N100P ixtp08n100p	PDF
IXTP08N100P Abstract: 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N Contextual Info: IXTA08N100P IXTP08N100P IXTY08N100P PolarTM Power MOSFET VDSS ID25 = 1000V = 0.8A ≤ 20Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P 4-02-08-A IXTP08N100P 08N100 08N100P IXTA08N100P ixtp08n100 IXTY08N100P T08N	PDF