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    IXTP14N60P Search Results

    IXTP14N60P Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTP14N60P
    		IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF 84.26KB 2
    IXTP14N60P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A TO-220 Original PDF 5
    IXTP14N60PM
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 7A TO-220 Original PDF 5
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    IXTP14N60P Price and Stock

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    IXYS Corporation IXTP14N60P

    MOSFET N-CH 600V 14A TO220AB
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    DigiKey IXTP14N60P Tube 177 1
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    Mouser Electronics () IXTP14N60P 299
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    Future Electronics IXTP14N60P Tube 300
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    TME IXTP14N60P 1
    • 1 $4.84
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    IXYS Corporation IXTP14N60PM

    MOSFET N-CH 600V 7A TO220
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    DigiKey IXTP14N60PM Tube 300
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    Mouser Electronics () IXTP14N60PM
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    IXTP14N60PM
    • 1 $5.39
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    IXTP14N60PM
    • 1 $5.39
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    TTI () IXTP14N60PM Tube 300
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    TME IXTP14N60PM 1
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    Littelfuse Inc IXTP14N60P

    Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube |Littelfuse IXTP14N60P
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    Newark IXTP14N60P Bulk 300
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    Littelfuse Inc IXTP14N60PM

    Disc Mosfet N-Ch Std-Polar To-220Ab/Fp/ Tube |Littelfuse IXTP14N60PM
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    Newark IXTP14N60PM Bulk 300
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    IXTP14N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    14n60

    Abstract: IXTP14N60PM
    Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTP14N60PM RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTP14N60PM 14N60P 12-22-08-G 14n60 IXTP14N60PM PDF

    IXTP14N60PM

    Abstract: 14n60 7A 27
    Contextual Info: IXTP14N60PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 600V = 7A Ω ≤ 550mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXTP14N60PM 14N60P 12-22-08-G IXTP14N60PM 14n60 7A 27 PDF

    Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTA14N60P IXTP14N60P IXTQ14N60P = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 IXTA14N60P 14N60P 12-22-08-G PDF

    IXTP14N60PM

    Contextual Info: PolarHVTM Power MOSFET IXTP14N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 7 A Ω ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		IXTP14N60PM O-220 14N60P 8-21-06E IXTP14N60PM PDF

    14n60

    Abstract: 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTA14N60P IXTP14N60P IXTQ14N60P
    Contextual Info: IXTA14N60P IXTP14N60P IXTQ14N60P PolarHVTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 062ombs IXTA14N60P 14N60P 14n60 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTP14N60P IXTQ14N60P PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF