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    IXTA14N60P Search Results

    IXTA14N60P Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA14N60P
    		IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF 84.26KB 2
    IXTA14N60P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A D2-PAK Original PDF 5
    SF Impression Pixel

    IXTA14N60P Price and Stock

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    IXYS Corporation IXTA14N60P

    MOSFET N-CH 600V 14A TO263
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    DigiKey IXTA14N60P Tube 194 1
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    Mouser Electronics () IXTA14N60P
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    IXTA14N60P
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    Future Electronics IXTA14N60P Tube 300
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    Quest Components () IXTA14N60P 120
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    IXTA14N60P 120
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    Chip 1 Exchange IXTA14N60P 4,884
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    Littelfuse Inc IXTA14N60P

    Disc Mosfet N-Ch Std-Polar To-263D2/ Tube |Littelfuse IXTA14N60P
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    Newark IXTA14N60P Bulk 300
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    RS IXTA14N60P Bulk 8 Weeks 50
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    IXTA14N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTA14N60P IXTP14N60P IXTQ14N60P = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 IXTA14N60P 14N60P 12-22-08-G PDF

    14n60

    Abstract: 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTA14N60P IXTP14N60P IXTQ14N60P
    Contextual Info: IXTA14N60P IXTP14N60P IXTQ14N60P PolarHVTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 062ombs IXTA14N60P 14N60P 14n60 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTP14N60P IXTQ14N60P PDF