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Abstract: ixth17p25 ixtm17p25
Contextual Info: I ÎOE D 1 4bflhS2b GOODatiO 5 | X Y S CORP □ P-CHANNEL MOSFETS IX Y S IXTH17P25 IXTM17P25 ' M A X IM U M R A T IN G S P a ram eter Sym . IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 V Ds s 250 Vdc Drain-Gate Voltage (R q s = 1.0MÎ1) (1) Vdgr 250
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ixth17p25ixtm17p25o-247o-204+200esn0tincluoembab
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AX 1668 F 24 pin
Abstract: AX 1668 F IXTH17P25 ixtm17p25
Contextual Info: I Î O E D 1 4bflhS2b GOODatiO 5 | X Y S CORP P-CHANNEL MOSFETS □ IX Y S IXTH17P25 IXTM17P25 ' MAXIMUM RATINGS Parameter Sym. IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 VDss 250 Vdc Drain-Gate Voltage (Rqs = 1.0MÎ1) (1) Vdgr 250 Vdc Vqs ± 20 Vcjc
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ixth17p25ixtm17p25o-247o-204+2ax 1668 f 24 pinax 1668 f
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IRF250
Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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00v/12airf250ixth13p20ixtp2n95+7ixtp2n100aixtp2n95aixtp4n100ixtp4n100aixtp4n90ixtp4n90aixtp4n95
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IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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ixth13p202n7100ixtp2p50mosfet irf460+6irf460 to-247ixtm10p50ixtm11p50ixtp4n100a2n7103irf460
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