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    IXFP5N100P Search Results

    IXFP5N100P Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFP5N100P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 5A TO-220 Original PDF 4
    IXFP5N100PM
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2.3A TO-220 Original PDF 4
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    IXFP5N100P Price and Stock

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    IXYS Corporation IXFP5N100PM

    MOSFET N-CH 1000V 2.3A TO220
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    DigiKey IXFP5N100PM Tube 196 1
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    Mouser Electronics IXFP5N100PM
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    TTI IXFP5N100PM Tube 300
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    Vyrian IXFP5N100PM 196
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    IXYS Corporation IXFP5N100P

    MOSFET N-CH 1000V 5A TO220AB
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    DigiKey IXFP5N100P Tube 14 1
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    Mouser Electronics IXFP5N100P 358
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    Verical IXFP5N100P 85 13
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    Newark IXFP5N100P Bulk 304 1
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    Future Electronics IXFP5N100P Tube 300
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    TME IXFP5N100P 85 1
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    Chip 1 Exchange IXFP5N100P 12,343
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    New Advantage Corporation IXFP5N100P 7,594 1
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    Littelfuse Inc IXFP5N100PM

    Discmosfetn-Ch Hiperfet-Pola To-220Ab/Fp/ Tube |Littelfuse IXFP5N100PM
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    Newark IXFP5N100PM Bulk 300
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    IXFP5N100P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFP5N100P

    Abstract: IXFA5N100P 5N100p
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A ≤ 2.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P IXFP5N100P IXFA5N100P PDF

    Contextual Info: Advance Technical Information VDSS ID25 IXFP5N100PM PolarTM HiPerFETTM Power MOSFET RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.3A Ω ≤ 2.8Ω OVERMOLDED (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings


    Original     		IXFP5N100PM 5N100P 7-13-A PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A Ω ≤ 2.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P PDF