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IXFH5N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFP5N100P Abstract: IXFA5N100P 5N100p Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A ≤ 2.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P IXFP5N100P IXFA5N100P	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A Ω ≤ 2.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P	PDF

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IXFP5N100P

Abstract: IXFA5N100P 5N100p
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A ≤ 2.8Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C

Original

IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P IXFP5N100P IXFA5N100P

PDF

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFA5N100P IXFH5N100P IXFP5N100P VDSS ID25 = 1000V = 5A Ω ≤ 2.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C

Original

IXFA5N100P IXFH5N100P IXFP5N100P O-263 5N100P

PDF