IXFN30N120P Search Results

IXFN30N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN30N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A SOT-227B	Original	PDF		4

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IXYS Corporation IXFN30N120P MOSFET N-CH 1200V 30A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN30N120P	Tube			300	1 - 10 - 100 - 1000 $47.35 10000 $47.35	Buy Now
Mouser Electronics	IXFN30N120P					1 - 10 - 100 - 1000 $53.29 10000 $53.29	Get Quote
TTI	IXFN30N120P	Tube			300	1 - 10 - 100 - 1000 $47.01 10000 $47.01	Buy Now
TME	IXFN30N120P				1	1 $81.38 10 $64.62 100 $64.62 1000 $64.62 10000 $64.62	Get Quote
New Advantage Corporation	IXFN30N120P		24		1	1 - 10 $150.32 100 $138.76 1000 $138.76 10000 $138.76	Buy Now
Littelfuse Inc IXFN30N120P Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube \|Littelfuse IXFN30N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFN30N120P	Bulk			300	1 - 10 - 100 $49.62 1000 $49.62 10000 $49.62	Buy Now

IXFN30N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFN30N120P Abstract: diode 1200v 30A 30N120P Contextual Info: IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C IXFN30N120P diode 1200v 30A	PDF
Contextual Info: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN30N120P 300ns OT-227 E153432 30N120P 1-07-A	PDF
Contextual Info: VDSS ID25 IXFN30N120P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN30N120P 300ns OT-227 E153432 30N120P 4-01-08-C	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF