IXFN26N100P Search Results

IXFN26N100P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN26N100P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 23A SOT-227B	Original	PDF		4

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IXYS Corporation IXFN26N100P Trans MOSFET N-CH 1KV 23A 4-Pin SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFN26N100P		6		2	1 - 10 $51.34 100 $51.34 1000 $51.34 10000 $51.34	Buy Now
TTI	IXFN26N100P	Tube			300	1 - 10 - 100 - 1000 $49.36 10000 $49.36	Buy Now
TME	IXFN26N100P		6		1	1 $40.72 10 $32.31 100 $32.31 1000 $32.31 10000 $32.31	Buy Now
Littelfuse Inc IXFN26N100P Mosfet Module, N-Ch, 1.2Kv, 23A, 595W; \|Littelfuse IXFN26N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFN26N100P	Bulk			1	1 $89.82 10 $89.82 100 $89.82 1000 $89.82 10000 $89.82	Buy Now
	IXFN26N100P	Bulk			300	1 - 10 - 100 - 1000 $55.08 10000 $51.63	Buy Now
RS	IXFN26N100P	Bulk		8 Weeks	10	1 - 10 $78.87 100 $72.56 1000 $72.56 10000 $72.56	Get Quote
Onlinecomponents.com	IXFN26N100P					1 - 10 - 100 $118.99 1000 $42.33 10000 $42.33	Buy Now
Flip Electronics	IXFN26N100P		230			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXFN26N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	ixfn26n100p 300ns ot-227 e153432 +226n100p 3-07-a	PDF
IXFN26N100P Contextual Info: IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfn26n100p 300ns ot-227 e153432 +226n100p 3-28-08-b	PDF
Contextual Info: VDSS ID25 IXFN26N100P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfn26n100p 300ns ot-227 e153432 +226n100p 3-28-08-b	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF