IXFN26N100P Search Results

IXFN26N100P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN26N100P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 23A SOT-227B	Original	PDF		4

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IXYS Corporation IXFN26N100P Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN26N100P					1 - 10 - 100 - 1000 $57.58 10000 $57.58	Get Quote
Verical	IXFN26N100P		6		2	1 - 10 $47.22 100 $47.22 1000 $47.22 10000 $47.22	Buy Now
TTI	IXFN26N100P	Tube			300	1 - 10 - 100 - 1000 $54.30 10000 $54.30	Buy Now
TME	IXFN26N100P		6		1	1 $42.51 10 $33.73 100 $33.73 1000 $33.73 10000 $33.73	Buy Now
Littelfuse Inc IXFN26N100P DiscMSFT N-CH HiPerFET-PolaSOT-227B(mini
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXFN26N100P	Bulk		8 Weeks	10	1 - 10 $78.87 100 $72.56 1000 $72.56 10000 $72.56	Get Quote
Onlinecomponents.com	IXFN26N100P					1 - 10 - 100 $118.99 1000 $42.33 10000 $42.33	Buy Now

IXFN26N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN26N100P 300ns OT-227 E153432 26N100P 3-07-A	PDF
IXFN26N100P Contextual Info: IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B IXFN26N100P	PDF
Contextual Info: VDSS ID25 IXFN26N100P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF