IRFZ48S Search Results

IRFZ48

Abstract: IRFZ48L IRFZ48S IRFZ48STRL SiHFZ48 SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G G D S Available RoHS*

Contextual Info: PD - 9.894A International IQR Rectifier IR F Z 4 8 S /L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching V R dss d s (o h ) = 60V = 0 .0 1 8 0 lD = 5 0 A

Contextual Info: International H Rectifier PD-9.894 • I NR 4ÖSSMSE ÜÜ1SÖEÜ bbT IRFZ48S INTERNATIONAL RECTIFIER HEXFET® Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance

DIODE FS 601

Abstract: irf 48v mosfet
Contextual Info: PD - 96099 IRFZ48SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.018Ω G ID = 50A† Description S Third Generation HEXFETs from International Rectifier

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)

IRFZ48L

Abstract: IRFZ48S IRFZ48STRL SiHFZ48L-E3 SiHFZ48S SiHFZ48S-E3 SiHFZ48STL
Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ48S, SiHFZ48S)

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V 0.018 Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration Single D2PAK (TO-263) G D

AN-994

Abstract: IRFZ48 IRFZ48L IRFZ48S
Contextual Info: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

AN-994

Abstract: IRFZ48 IRFZ48L IRFZ48S
Contextual Info: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

AN-994

Abstract: IRFZ48 IRFZ48L IRFZ48S
Contextual Info: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.894A IRFZ48S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.018Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

IEC 269-5

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 0.018 110 29 36 Single D DESCRIPTION S Third generation Power MOSFETs from Vishay utilize

Contextual Info: IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Qg Max. (nC) 110 Qgs (nC) 29 • • • • • • Qgd (nC) 36 DESCRIPTION VDS (V) 60 RDS(on) (Ω) VGS = 10 V Configuration 0.018 Single D G Available RoHS* COMPLIANT

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

1RFZ48

Abstract: RFZ48 RG-910 AN-994 IRFZ48 IRFZ48S SMD-220 d72a
Contextual Info: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q

1RFZ48

Abstract: RFZ48 smd JSs diode RFZ4
Contextual Info: PD-9.758 International k ?r Rectifier IRFZ48 HEXFET Power M O SFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching Ease of Paralleling ^ D SS- 60V ^DS on = 0 .0 1 8 Q

TO220-SMD

Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
Contextual Info: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V

F710S

Abstract: H5 SMD FZ24S IRF540S FZ44S F1310S fz44 irf1310
Contextual Info: International Ü lR e c tifie r HEXFET Power M OSFETs Surface Mount S M D -2 2 0 These devices provide the highest power capability and lowest possible on-resistance in a surface mount package. They can dissipate up to 2W in a typical surface mount application and are available in tape and reel.