IRFP264N Search Results

IRFP264N

Abstract: IRFP264n equivalent SiHFP264N
Contextual Info: IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating

035H

Abstract: IRFPE30 IRFP264NPBF
Contextual Info: PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 60mΩ G ID = 44A

IRFP264N

Abstract: 035H IRFPE30
Contextual Info: PD - 94214A IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A

035H

Abstract: IRFPE30 P-CHANNEL 25A TO-247 POWER MOSFET
Contextual Info: PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 60mΩ G ID = 44A

Contextual Info: PD - 94214A IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A

Contextual Info: IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating

IRFP264N

Abstract: 035H IRFPE30
Contextual Info: PD - 94214 IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A

Contextual Info: PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 60mΩ G ID = 44A

20V P-Channel Power MOSFET 500A

Abstract: 035H IRFP264N IRFPE30
Contextual Info: PD - 94214A IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: PD - 95820 IRFC264NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Tape and Reel upon request , Chip Pack, and Sawn on Film ‚ G 250V RDS(on) = 60mΩ (max.) 6" Wafer S Electrical Characteristics Parameter V(BR)DSS RDS(on)

IRFP460Z

Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Contextual Info: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB

IRFP264n equivalent

Abstract: IRFC264
Contextual Info: PD - 95820 IRFC264NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Tape and Reel upon request , Chip Pack, and Sawn on Film ‚ G 250V RDS(on) = 60mΩ (max.) 6" Wafer S Electrical Characteristics Parameter V(BR)DSS RDS(on)

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122