IRFF91 Search Results

Contextual Info: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated

IRFF9131

Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
Contextual Info: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d

IRFF9120

Contextual Info: IRFF9120 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

Contextual Info: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

MOSFET

Abstract: 2N6845
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)

IRFF9130

Contextual Info: IRFF9130 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

JANTX2N6845

Abstract: diode 50v 40A ir IRFF9120 JANTXV2N6845
Contextual Info: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International

Contextual Info: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International

Contextual Info: H a r r IRFF9130, IRFF9131, IRFF9132, IRFF9133 i s s e m i c o n d u c t o r -5.5A and -6.5A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -5.5A and-6.5A ,-80V and-100V These are P-Channel enhancement mode silicon gate

Contextual Info: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

IRF024

Abstract: IRF034 IRF045 IRFF9030 IRFF9010 IRFF9020 IRFF9111 IRFF9112 IRFF9113 IRFF9121
Contextual Info: INTERNATIONAL RECTIFIER BbE D MflSSMSa GDiaOTti ê International is ] R ectifier H EXFET Hermetic Package r - 3 c?~/'3 TO-39 N-Channel Part Number V q s Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133

2N6844

Abstract: 2N6846 2N6848 T30 rectifier 2N6850 T0-213AA IRFF9010 IRFF9012 IRFF9020 IRFF9022
Contextual Info: HERMETIC PACKAGE HEXFETs — INTERNATIONAL RECTIFIER SbE D • INTERNATIONAL. RECTIFIER 4ÛSS4S2 DOlOSbO 7 ■ ll&R T*-3 ^ - 0 3 ~ TO-39 Package P-CHANNEL Types IRFF9030* IRFF9032* IRFF9020“ IRFF9022* IRFF9010* IRFF9012* IRFF9131 IRFF9133 2N6848 IRFF9121

IRFF9120

Contextual Info: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.

IRFF9110

Contextual Info: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

Contextual Info: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF024

Abstract: 2N6845 IRF035 33MIL
Contextual Info: International Í^ R ÍF W 4 Íf¡ÖT HEXFFT n C A rC I ^ r ie u m ie r un Power MOSFETs Hermetic Package TO-39 N-Channel Part Number Vos Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 -80

IRFF9120

Abstract: 2n6845 TO-205AF Package
Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

IRFF9130

Abstract: JANTX2N6849 JANTXV2N6849 irff913
Contextual Info: PD - 90550C REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9130 JANTX2N6849 JANTXV2N6849 JANTS2N6849 REF:MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number IRFF9130 BVDSS -100V RDS(on) 0.30Ω ID -6.5A  The HEXFET technology is the key to International

rectifier diode 1-35 LA V6

Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T
Contextual Info: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated

9131

Abstract: IRFF9131 1RFF9130 IRFF9130 3919 L 9132 k 3919 IRFF9132 IRFF9133 LAE 0132
Contextual Info: SILICONIX INC 18E D • ÔSSH73S 0 0 1 4 9 3 7 T ■ IRFF9130/9131 /9132/9133 C X 'S i f l c c T n l x J u w incorporated P-Channel Enhancement Mode Transistors T -3 BOTTOM VIEW. PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF9130 " g p Id (A -100 0.30 -6.5 IRFF9131

tc 9123

Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121
Contextual Info: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r

MFE9200

Abstract: BS107 MOTOROLA BS170 MOTOROLA MPF4150 IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121
Contextual Info: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) VGS (t/h) 0n rds (on) @ ID •d s s V(BH)DSS ■g s s C |S S ^rss •on •off n Max (A) Min Max //A Max (V) Min (nA) Max (pf) Max (pf) Max (ns) Max (ns) Max IRFF9110 IRFF9111 IRFF9112 IRFF9113