IRFD014 Search Results
IRFD014 FFF Equivalents (1)
The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| IRFD014 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
IRFD014 Functional Equivalents (3)
The Functional Equivalents tab will give you options that are likely to match the same function of IRFD014, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| IRFD014 | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| IRFD014PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| PMV164ENEA | Nexperia | Check for Price | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.218ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB |
IRFD014 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFD014 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| IRFD014 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 1.7A 4-DIP | Original | 9 | |||
| IRFD014 | International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A) | Scan | 174.79KB | 6 | ||
| IRFD014 | International Rectifier | Plastic Package HEXFETs | Scan | 106.28KB | 1 | ||
| IRFD014 | International Rectifier | HEXFET Power MOSFETs | Scan | 51.17KB | 1 | ||
| IRFD014 | International Rectifier | HEXFET Power MOSFET | Scan | 174.78KB | 6 | ||
| IRFD014 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 1.7A, Pkg Style HEXDIP | Scan | 50.01KB | 1 | ||
| IRFD014 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 106.71KB | 1 | ||
| IRFD014 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.96KB | 1 | ||
| IRFD014PBF | International Rectifier | HEXFET Power MOSFET | Original | 2.14MB | 8 | ||
| IRFD014PBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 1.7A 4-DIP | Original | 9 |
IRFD014 Price and Stock
Vishay Intertechnologies IRFD014PBFMOSFET, N, DIL; Available until stocks are exhausted |
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IRFD014PBF | Bulk | 1 |
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IRFD014PBF | Bulk | 2,500 |
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Vishay Siliconix IRFD014PBFIRFD014PBF N-CHANNEL MOSFET TRANSISTOR, 1.7 A, 60 V, 4-PIN HVMDIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD014PBF | Bulk | 2,500 |
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International Rectifier IRFD014Trans MOSFET N-CH 60V 1.7A 4-Pin HVMDIP |
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IRFD014 | 1,183 |
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IRFD014 | 118 |
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| IRFD014 | 66 |
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| IRFD014 | 62 |
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IRFD014 | 5,600 |
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Vishay Siliconix IRFD014POWER FIELD-EFFECT TRANSISTOR, 1.7A I(D), 60V, 0.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD014 | 81 |
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Thomson Consumer Electronics IRFD014Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD014 | 866 |
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IRFD014 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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IRFD014 SiHFD014 AN609, CONFIGURA5-Oct-10 3009m 0416u 6348m 9120m | |
IRF0110
Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
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OCR Scan |
IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310 | |
IRFD120Contextual Info: PD- 95920 IRFD014PbF Lead-Free 10/27/04 Document Number: 91125 www.vishay.com 1 IRFD014PbF Document Number: 91125 www.vishay.com 2 IRFD014PbF Document Number: 91125 www.vishay.com 3 IRFD014PbF Document Number: 91125 www.vishay.com 4 IRFD014PbF Document Number: 91125 |
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IRFD014PbF 12-Mar-07 IRFD120 | |
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Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 12-Mar-07 | |
C289
Abstract: C285 IRFD014
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OCR Scan |
IRFD014 C-288 C-289 C289 C285 IRFD014 | |
IRFD014
Abstract: PD-9700
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OCR Scan |
IRFD014 IRFD014 PD-9700 | |
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Contextual Info: PD- 95920 IRFD014PbF Lead-Free 10/27/04 Document Number: 91125 www.vishay.com 1 IRFD014PbF Document Number: 91125 www.vishay.com 2 IRFD014PbF Document Number: 91125 www.vishay.com 3 IRFD014PbF Document Number: 91125 www.vishay.com 4 IRFD014PbF Document Number: 91125 |
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IRFD014PbF 08-Mar-07 | |
IRFD014PbF
Abstract: IRFD120 P-CHANNEL
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IRFD014PbF IRFD120 IRFD014PbF IRFD120 P-CHANNEL | |
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Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFD120
Abstract: HexDIP Package HEXDIP
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IRFD014PbF IRFD120 IRFD120 HexDIP Package HEXDIP | |
IRFD014
Abstract: PD-9700 PD9700
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OCR Scan |
IRFD014 0-20H IRFD014 PD-9700 PD9700 | |
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Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: |I N R International ligi Rectifier PD-9.700A IRFD014 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements bSE D |
OCR Scan |
IRFD014 | |
IRFD014Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 2002/95/EC 18-Jul-08 IRFD014 | |
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IRFD014Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 2002/95/EC 11-Mar-11 IRFD014 | |
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Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRFD014 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.7 I(DM) Max. (A) Pulsed I(D)1.2 @Temp (øC)100# IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC)-55õ |
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IRFD014 | |
IRFD014
Abstract: S10 diode VISHAY MARKING S10 vishay body marking IRFD014
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IRFD014, SiHFD014 2002/95/EC 11-Mar-11 IRFD014 S10 diode VISHAY MARKING S10 vishay body marking IRFD014 | |
IRFD014Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 18-Jul-08 IRFD014 | |
MO-001
Abstract: TO-251 Outline TO-251AA
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OCR Scan |
IRFD015 IRFD014 IRFD025 IRFD024 IRFD113 IRFD123 IRFD110 IRFD120 IRFD213 IRF0223 MO-001 TO-251 Outline TO-251AA | |
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Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature |
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IRFD014, SiHFD014 2002/95/EC 18-Jul-08 | |
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Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997 D D D D D D TPS2811, TPS2812, TPS2813 . . . D, P, AND PW PACKAGES TOP VIEW Industry-Standard Driver Replacement 25-ns Max Rise/Fall Times and 40-ns Max |
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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 SLVS132D 25-ns 40-ns | |
transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
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1N2074A
Abstract: h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117
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AN978 116ns AN-967 AN-961 AN-959 1N2074A h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117 | |