IRF7342QPBF Search Results
IRF7342QPBF Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRF7342QPBF | International Rectifier | HEXFET Power MOSFET | Original | 184.26KB | 7 |
IRF7342QPBF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PD - 96109A IRF7342QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V |
Original |
6109airf7342qpbfeia-481eia-541 | |
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Contextual Info: IRF7342QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage |
Original |
irf7342qpbfeia-481eia-541 | |
PN channel MOSFET 10A
Abstract: P channel MOSFET 10A
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Original |
irf7342qpbfeia-481eia-541pn channel mosfet 10a+1 | |
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Contextual Info: IRF7342QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = -55V RDS on = 0.105Ω |
Original |
irf7342qpbfd-020d | |
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Contextual Info: PD - 96109A IRF7342QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = -55V |
Original |
6109airf7342qpbfeia-481eia-541 | |
IRLML6402TRPBF
Abstract: IRF7404TRPB TSSOP-6 IRLML6302TRPBF IRF7240TRPBF IRLML6401TRPBF TSSOP6 package IRFR5305PBF IRF5210STRLPBF irf7416trpbf
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Original |
o-220abo-247acirlml6401trpbfirf7329pbf+15 |