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    IRF644 Search Results

    IRF644 Datasheets (63)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF644
    Fairchild Semiconductor 250V N-Channel MOSFET Original PDF 918.9KB 10
    IRF644
    International Rectifier 250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF 941.84KB 7
    IRF644
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF644
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 14A TO-220AB Original PDF 9
    IRF644
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 205.11KB 5
    IRF644
    International Rectifier HEXFET Power MOSFET Scan PDF 177.04KB 6
    IRF644
    International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF 42.04KB 1
    IRF644
    International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF 44.28KB 1
    IRF644
    International Rectifier Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) Scan PDF 177.04KB 6
    IRF644
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 14A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRF644
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 112.74KB 1
    IRF644
    Unknown FET Data Book Scan PDF 100.01KB 2
    IRF644
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.34KB 1
    IRF644
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.34KB 1
    IRF644
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 85.5KB 1
    IRF644A
    Fairchild Semiconductor Advanced Power MOSFET Original PDF 230.34KB 7
    IRF644A
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF644A
    Fairchild Semiconductor Advanced Power MOSFET Scan PDF 155.51KB 6
    IRF644B
    Fairchild Semiconductor 250V N-Channel MOSFET Original PDF 700.44KB 8
    IRF644B
    Fairchild Semiconductor 250V N-Channel MOSFET Original PDF 918.89KB 10
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    IRF644 Price and Stock

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    Verical () IRF644 23,619 175
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    • 1000 $1.93
    • 10000 $1.81
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    IRF644 700 175
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    Quest Components IRF644 322
    • 1 $2.50
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    Rochester Electronics IRF644 24,445 1
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    Vishay Intertechnologies IRF644PBF

    Trans MOSFET N-CH 250V 14A 3-Pin(3+Tab) TO-220AB
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    IRF644PBF 468 35
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    Avnet Americas IRF644PBF Bulk 28 Weeks 1,000
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    Arrow Electronics () IRF644PBF 715 20 Weeks 1
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    IRF644PBF 534 20 Weeks 1
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    IRF644PBF 10 1
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    Newark () IRF644PBF Bulk 3,380 1
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    IRF644PBF Bulk 1,993 1
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    RS IRF644PBF Bulk 886 3 Weeks 1
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    TTI IRF644PBF Tube 13,950 50
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    Quest Components IRF644PBF 40
    • 1 $2.21
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    TME IRF644PBF 468 1
    • 1 $2.24
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    EBV Elektronik IRF644PBF 34 Weeks 50
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    FAIRCHILD IRF644B_FP001

    IRF644B-FP001
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    Verical IRF644B_FP001 636 175
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    Vishay Intertechnologies IRF644SPBF

    Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) D2PAK
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    Verical () IRF644SPBF 302 19
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    IRF644SPBF 40 4
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    Avnet Americas IRF644SPBF Tape & Reel 28 Weeks 1,000
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    Arrow Electronics IRF644SPBF 40 20 Weeks 1
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    Newark () IRF644SPBF Bulk 741 1
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    IRF644SPBF Bulk 1,000
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    TTI IRF644SPBF Tube 1,100 50
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    TME IRF644SPBF 302 1
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    ComSIT USA IRF644SPBF 1,000
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    EBV Elektronik IRF644SPBF 34 Weeks 50
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    Vishay Intertechnologies IRF644PBF-BE3

    N-CHANNEL 250V - Tape and Reel (Alt: IRF644PBF-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas () IRF644PBF-BE3 Tape & Reel 1,000 26 Weeks 1,000
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    IRF644PBF-BE3 Bulk 1
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    Newark () IRF644PBF-BE3 Bulk 792 1
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    IRF644PBF-BE3 Bulk 1,000
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    TTI IRF644PBF-BE3 Tube 1,000
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    EBV Elektronik IRF644PBF-BE3 38 Weeks 50
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    IRF644 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    irf644sihf6442002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039


    Original
    irf644pbfo-220ab12-mar-07 PDF

    Contextual Info: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040


    Original
    irf644spbf08-mar-07 PDF

    Contextual Info: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original
    94107birf644nirf644nsirf644nl+108-mar-07 PDF

    Contextual Info: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf644b/irfs644bo-220fp001o-220f+1irfs644b PDF

    Contextual Info: $GYDQFHG 3RZHU 026 7 IRF644S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original
    irf644s PDF

    IRF644PBF

    Abstract: IRF644 SiHF644-E3 SiHF644 diode 330
    Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    irf644sihf644o-22018-jul-08+3irf644pbfsihf644-e3diode 330 PDF

    IRF644B

    Abstract: IRFS644B IRF series mosfet irf 150
    Contextual Info: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf644b/irfs644bo-220irf644birfs644b+2irf seriesmosfet irf 150 PDF

    IRF644A

    Contextual Info: IRF644A A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan
    irf644a PDF

    IRF644N

    Abstract: IRF644NL IRF644NS SiHF644N SiHF644N-E3 SiHF644NS SiHF644NS-E3
    Contextual Info: IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 V RDS(on) (Ω) VGS = 10 V • Dynamic dV/dt Rating 0.240 RoHS* • 175 °C Operating Temperature


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    irf644nirf644nsirf644nlsihf644n+8sihf644nssihf644nlo-262o-220o-26318-jul-08sihf644n-e3sihf644ns-e3 PDF

    Contextual Info: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.28 68 Qgs (nC) 11 Qgd (nC) 35 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D S G • Halogen-free According to IEC 61249-2-21


    Original
    irf644ssihf644so-2632002/95/ec+32011/65/eujs709a02-oct-12 PDF

    irf644

    Abstract: Irfp244
    Contextual Info: IRF644/645 IRFP244/245 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    irf644/645irfp244/245irf644/irfp244irf645/irfp245+2irf644irfp244 PDF

    644NS

    Abstract: IRF644NLPBF
    Contextual Info: PD - 95161 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF644NPbF IRF644NSPbF IRF644NLPbF l HEXFET Power MOSFET


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    o-220o-220aban-994irf644n+3irf644ns/l644nsirf644nlpbf PDF

    rf1s644s

    Contextual Info: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    irf644irf645irf646irf647+5rf1s644rf1s644smta17423erf644rf1s644s PDF

    IRF644N

    Abstract: IRF644NL IRF644NS diode gp 634
    Contextual Info: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


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    94107birf644nirf644nsirf644nl+3o-22012-mar-07diode gp 634 PDF

    IRF644

    Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    g0172flflirf644/645irfp244/245irf644/irfp244+5irf645/irfp245irf644irfp244irf645irfp245 PDF

    Contextual Info: N-CHANNEL POWER MOSFETS IRF644 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    irf644curren07 PDF

    Contextual Info: PD-9.1006 In tern atio n al k ?r R e c tifie r IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description


    OCR Scan
    irf644ssmd-220d-6380dd51453 PDF

    Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    irf644sihf6442002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    irf644sihf6442002/95/eco-220ab+22011/65/eujs709a PDF

    Contextual Info: IRF644A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max @ Vos = 250V


    OCR Scan
    irf644a PDF

    Contextual Info: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    irf644sihf644o-22012-mar-07 PDF

    Contextual Info: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original
    irf644ssihf644s2002/95/eco-263+118-jul-08 PDF

    IRF644N

    Abstract: IRF644NL IRF644NS diode gp 634 diode gp 421
    Contextual Info: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from


    Original
    94107birf644nirf644nsirf644nl+6o-220o-220aban-994irf644ns/ldiode gp 634diode gp 421 PDF