IPT007N06N Search Results
IPT007N06N Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IPT007N06NATMA1 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 300A 8HSOF | Original | 12 |
IPT007N06N Price and Stock
Infineon Technologies AG IPT007N06NATMA1MOSFET N-CH 60V 300A 8HSOF |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPT007N06NATMA1 | Cut Tape | 11,967 | 1 |
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IPT007N06NATMA1 | Reel | 18 Weeks | 2,000 |
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IPT007N06NATMA1 | 7,876 |
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IPT007N06NATMA1 | 10,000 | 2,000 |
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IPT007N06NATMA1 | 10,000 | 18 Weeks | 2,000 |
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IPT007N06NATMA1 | Cut Tape | 635 | 1 |
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IPT007N06NATMA1 | 339,469 | 1 |
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IPT007N06NATMA1 | 1 |
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IPT007N06NATMA1 | Reel | 38 | 1 |
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IPT007N06NATMA1 | Cut Tape | 3,714 | 0 Weeks, 1 Days | 1 |
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IPT007N06NATMA1 | 32,400 |
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IPT007N06NATMA1 | 77 |
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IPT007N06NATMA1 | 122,000 | 19 Weeks | 2,000 |
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IPT007N06NATMA1 | 22,000 | 2,000 |
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IPT007N06NATMA1 | 98,000 | 1 |
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IPT007N06NATMA1 | 55,271 |
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IPT007N06NATMA1 | 26,500 |
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Infineon Technologies AG IPT007N06NMOSFETs TRENCH 40<-<100V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPT007N06N | 4,998 |
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IPT007N06N | 1,529 |
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IPT007N06N | 2,295 |
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IPT007N06N | 28,900 |
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IPT007N06N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPT007N06N DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPT007N06N 1Description HSOF Features Tab •100%avalanchetested |
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IPT007N06N IEC61249-2-21 | |
Contextual Info: IPT007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max |
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IPT007N06N IEC61249-2-21 007N06N | |
IPT007N06N
Abstract: f150at IPT00 d150 fet 007N06N
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IPT007N06N IEC61249-2-21 007N06N IPT007N06N f150at IPT00 d150 fet 007N06N | |
007N06NContextual Info: IPT007N06N OptiMOSTM Power-Transistor Product Summary Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant VDS 60 V RDS on),max |
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IPT007N06N IEC61249-2-21 007N06N 007N06N | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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